Publication

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Related publications (93)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Graph Chatbot

Chat with Graph Search

Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

Accurate determination of charge transition levels of the As-As dimer defect at GaAs/oxide interfaces through hybrid functionals

Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs

Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional study

Correspondence of defect energy levels in hybrid density functional theory and many-body perturbation theory

Nonlinear Quantum Optomechanics via Individual Intrinsic Two-Level Defects

First principles study of As 2p core-level shifts at GaAs/Al2O3 interfaces

Effect of transverse load on the critical current of a coated conductor Roebel cable

Intrinsic defects in GaAs and In GaAs through hybrid functional calculations