Filter designFilter design is the process of designing a signal processing filter that satisfies a set of requirements, some of which may be conflicting. The purpose is to find a realization of the filter that meets each of the requirements to a sufficient degree to make it useful. The filter design process can be described as an optimization problem where each requirement contributes to an error function that should be minimized. Certain parts of the design process can be automated, but normally an experienced electrical engineer is needed to get a good result.
65 nm processThe 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.
Signal-to-noise ratioSignal-to-noise ratio (SNR or S/N) is a measure used in science and engineering that compares the level of a desired signal to the level of background noise. SNR is defined as the ratio of signal power to noise power, often expressed in decibels. A ratio higher than 1:1 (greater than 0 dB) indicates more signal than noise. SNR is an important parameter that affects the performance and quality of systems that process or transmit signals, such as communication systems, audio systems, radar systems, imaging systems, and data acquisition systems.
Analogue filterAnalogue filters are a basic building block of signal processing much used in electronics. Amongst their many applications are the separation of an audio signal before application to bass, mid-range, and tweeter loudspeakers; the combining and later separation of multiple telephone conversations onto a single channel; the selection of a chosen radio station in a radio receiver and rejection of others.
CMOSComplementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.
Electronic filter topologyElectronic filter topology defines electronic filter circuits without taking note of the values of the components used but only the manner in which those components are connected. Filter design characterises filter circuits primarily by their transfer function rather than their topology. Transfer functions may be linear or nonlinear. Common types of linear filter transfer function are; high-pass, low-pass, bandpass, band-reject or notch and all-pass.
Electronic filterElectronic filters are a type of signal processing filter in the form of electrical circuits. This article covers those filters consisting of lumped electronic components, as opposed to distributed-element filters. That is, using components and interconnections that, in analysis, can be considered to exist at a single point. These components can be in discrete packages or part of an integrated circuit. Electronic filters remove unwanted frequency components from the applied signal, enhance wanted ones, or both.
Noise figureNoise figure (NF) and noise factor (F) are figures of merit that indicate degradation of the signal-to-noise ratio (SNR) that is caused by components in a signal chain. These figures of merit are used to evaluate the performance of an amplifier or a radio receiver, with lower values indicating better performance. The noise factor is defined as the ratio of the output noise power of a device to the portion thereof attributable to thermal noise in the input termination at standard noise temperature T0 (usually 290 K).
Chebyshev filterChebyshev filters are analog or digital filters that have a steeper roll-off than Butterworth filters, and have either passband ripple (type I) or stopband ripple (type II). Chebyshev filters have the property that they minimize the error between the idealized and the actual filter characteristic over the operating frequency range of the filter, but they achieve this with ripples in the passband. This type of filter is named after Pafnuty Chebyshev because its mathematical characteristics are derived from Chebyshev polynomials.
Terahertz metamaterialA terahertz metamaterial is a class of composite metamaterials designed to interact at terahertz (THz) frequencies. The terahertz frequency range used in materials research is usually defined as 0.1 to 10 THz. This bandwidth is also known as the terahertz gap because it is noticeably underutilized. This is because terahertz waves are electromagnetic waves with frequencies higher than microwaves but lower than infrared radiation and visible light.
