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Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

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Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Emanuele Uccelli, Efthimios Kaxiras, Jun Ren

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

2011

High-Power 1.48-μm Wafer-Fused Optically Pumped Semiconductor Disk Laser

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu

An output power up to 5 W at 1.48- m wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown ...

Institute of Electrical and Electronics Engineers2011

Pyramidal GaAs/AlzGa1-zAs quantum wire/dot systems with controlled heterostructure potential

Elyahou Kapon, Alok Rudra, Jean-Daniel Ganière, Qing Zhu

The structural and optical properties of controlled-heterostructure-potential, low-dimensional GaAs/AlGaAs nanostructures self-formed during organometallic chemical vapor deposition in tetrahedral pyramids etched in (111) B-GaAs substrates, are investigate ...

American Physical Society2010

A contacting scheme to measure the transport properties into self-assembled InAs Quantum Wires (QWRs) or Quantum Dots (QDs) is presented. The nanostructures are formed on the (110) cleaved edge of a AlAs/AlGaAs heterostructure substrate by means of the Cle ...

2009

Molecular beam epitaxy is used for the synthesis of catalyst-free GaAs nanowires and related quantum heterostructures. After growth of the nanowire GaAs core, the conditions are changed in situ towards standard MBE planar growth in order to obtain quantum ...

Royal Society of Chemistry2009

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases a ...

2009

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Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to 20 nm thickness is studied by photoluminescence (PL) and PL excitation (PLE) spectroscopy. It is ...

2009

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj

Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the g ...

Institute of Physics2009

Quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) are semiconductor heterostructures with nanoscopic dimensions. At this length scale, their properties are governed by quantum mechanics. The interest in these nanostructures is motivated by a ...

EPFL2008

In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...

EPFL2008