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Two-Dimensional materials: from large-area growth to the performance in radio-frequency range

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Nanopores are nanometer-sized holes that were initially proposed for DNA sequencing. Several years ago sequencing was made possible with biological nanopores. However, solid-state nanopores have plenty of advantages to offer compared to their biological co ...

EPFL2020

In the past half-century, the digital revolution completely changed the world we live in and the ways we experience it. Over this period, the underlying force supporting the continuous technological development has been the geometrical scaling of transisto ...

EPFL2020

Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling

Benjamin Aaron Helfrecht, Alejandro Strachan

As the challenges in continued scaling of the integrated circuit technology escalate every generation, there is an urgent need to find viable solutions for both the front-end-of-line (transistors) and the back-end-of-line (interconnects). For the interconn ...

AMER INST PHYSICS2020

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Junrui Zhang, Erick Antonio Garcia Cordero, Maneesha Rupakula, Hoël Maxime Guérin, Francesco Bellando, Guillaume Charles Henri Herment

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

2019

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...

EPFL2018

Molybdenum Disulfide (MoS2) Nanoelectromechanical Resonators With On-Chip Aluminum Nitride (AlN) Piezoelectric Excitation

Luis Guillermo Villanueva Torrijo, Tom Larsen, Muhammad Faizan

We report on the first experimental demonstration of vibrating two-dimensional nanoelectromechanical systems (2D NEMS) with on-chip piezoelectric excitation. Combining a wafer-scale aluminum nitride (AlN) thin film technology with an all-dry transfer techn ...

2018

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Detection of analytes by means of field-effect transistors bearing ligand-specific receptors is fundamentally limited by the shielding created by the electrical double layer (the “Debye length” limitation). We detected small molecules under physiological h ...

2018

High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

Andras Kis, Dumitru Dumcenco

The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 ...

Mdpi Ag2017

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Toward the large-area deposition of MoS2 layers, we employ metal–organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together ...

American Chemical Society2017