Publication

Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics

Abstract

High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as an attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with 1.35 mu m thick waveguides and optical Q-factors of 3.7 x 10(6) and demonstrate single temporal dissipative Kerr soliton based coherent optical frequency comb generation. Our newly developed process is also interesting for other material platforms, photonic integration, and mid-infrared Kerr comb generation. (C) 2016 Optical Society of America

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Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI).
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