Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N
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Recent years have seen spectacular developments in the domain of nano-optics.
Alongside the well-known techniques of super-resolution microscopy progress
in nanofabrication has enabled important improvements in the fields
of optical imaging and spectros ...
Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact ...
To meet the future global energy demand - an estimated additional 10 terawatts (TWs) per year in 2050 - a diversification of energy sources and fuels is needed. Solar energy represents a prominent alternative energy source. An important material for these ...
We demonstrate a novel fabrication approach for high-throughput fabrication of engineered infrared plasmonic nanorod antenna arrays with Nanostencil Lithography (NSL). NSL technique, relying on deposition of materials through a shadow mask, offers the flex ...
Semiconductor nanowires are interesting building blocks for a variety of electronic and optoelectronic applications, and they provide an excellent platformto probe fundamental physical effects. For the realization of nanowire based devices, a deep understa ...
The study of oxygen-sensitive biological samples requires an effective control of the atmosphere in which they are housed. In this aim however, no commercial anaerobic chamber is adequate to solely enclose the sample and small enough to fit in a compact sp ...
The goal of this thesis is the combination of the high spatial resolution of scanning tunneling microscopy (STM) with the high temporal resolution of optical spectroscopy, by monitoring the light emitted from the tunnel junction. Two complementary techniqu ...
We report the observation of Shubnikov-de Haas oscillations in single crystals of the Rashba spin-splitting compound BiTeI, from both longitudinal [R-xx(B)] and Hall [R-xy(B)] magnetoresistance. Under magnetic fields up to 65 T, we resolved unambiguously o ...
The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...