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Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint

Related publications (33)

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Offset Compensation Based on Distributed Hall Cell Architecture

Pierre-André Farine, Pavel Kejik, Pierre-François Thibault Bourdelle

A new offset reduction strategy for CMOS Hall devices is proposed. The novelty is to fragment the Hall device into multiple Hall blocks, distributed over the silicon area and easy to interconnect. The suitable number of Hall blocks and the bias current lev ...

Institute of Electrical and Electronics Engineers2013

Offset Compensation Based on Distributed Hall Cell Architecture

Pierre-André Farine, Pavel Kejik, Pierre-François Thibault Bourdelle

Ieee-Inst Electrical Electronics Engineers Inc2013

DNA Trans location through Low-Noise Glass Nanopores

Aleksandra Radenovic, Lorenz Jan Steinbock, Roman Bulushev, Camille Alice Raillon, Swati Krishnan

The effect of electron irradiation-induced shrinking on glass nanocapillaries with diameters ranging from 75 to 14 nm was analyzed by measuring the conductance characteristics with and without DNA translocation. We have investigated nanocapillary shrinking ...

American Chemical Society2013

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Charge Collection Studies and Electrical Measurements of Heavily Irradiated 3D Double-Sided Sensors and Comparison to Planar Strip Detectors

Barinjaka Rakotomiaramanana

Three-dimensional (3D) silicon detectors offer advantages over standard planar devices as more radiation hard sensors. These detectors and their applications in the upgrades of the LHC experiments are discussed. 3D detectors with a double-sided geometry ha ...

2011

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Biosensors often require detecting infinitesimal amount of species, thus their readout must be improved for highest sensitivity and best Signal-to-Noise ratio. We will present a simulation tool for piezoresistive strain sensors, which takes into account no ...

2011

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We report on a top-down complementary metal oxide semiconductor (CMOS) compatible fabrication method of ultra-high density Si nanowire (SiNW) arrays using a time multiplexed alternating process (TMAP) with low temperature budget. The flexibility of the fab ...

Elsevier2011

Carbon Nanotube Electromechanical Devices for Radio Frequency Applications

Anupama Arun

Carbon nanotubes (CNT) have been investigated extensively in the recent years for application in nano-electromechanical systems (NEMS). CNTs have extraordinary electrical and mechanical properties. They are stiff, with low density, high electrical conducti ...

EPFL2010

Integrated Hall devices have the great advantage, over other magnetic sensors, that they can be fully fabricated by a standard CMOS process. However they are known to have a relatively large offset (i.e. residual voltage at zero magnetic field). Techniques ...

2010