Coupled arrays of photonic crystal nanocavities and their applications - art. no. 61280C
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Microscopic ohmic contacts are made by laser chem. vapor deposition of platinum on a Pyrex substrate. The elec. cond. of the deposited metal stripes is measured as a function of the laser power, the writing speed, and the organometallic vapor pressure. The ...
SF6 in a free jet was vibrationally excited by a continuous-wave CO2 laser. The subsequent energy transfer processes, in which vibrational energy is degraded, lead to changes in the beam's spatial, velocity and cluster-size distributions. These changes wer ...
Laser generated defects in (Al,Ga) As have been investigated by photochemical wet etching and TEM measurements. Photoetching reveals a 500 nm wide zone in the center of the processed area where according to laser power either a luminescent or a nonradiativ ...
Springer-Verlag (Springer Series in Chemical Physics 39)1984
A mol. beam mass spectrometer was constructed to study the formation of van der Waals clusters over a wide mass range. Using this app. (SF6)m was detected with 1 ? m ? 100 in the adiabatic expansion of SF6. By irradiating the SF6 jet with a continuous-wave ...
The deposition of Ga on quartz substrates by photodissociation of trimethylgallium has been investigated. Light from a frequency doubled Ar-ion laser beam (257.2 nm) was focused onto quartz substrates. The Ar-ion laser was operated under CW or mode-locking ...
A new luminescence band is observed in optically pumped Ge-doped (Al,Ga)As multilayer structures, that were previously subjected to laser irradiation. The band is shifted by 90 meV to longer wavelength with respect to the luminescence peak of the unexposed ...
An interferometric technique was developed for detecting fast displacements of small areas in beam direction by less than λ/8. It utilizes a modified Michelson interferometer and a He-Ne laser light source. The technique was applied to measure the t ...
An external cavity coupled to a conventional Fabry-Perot GaAs diode laser operating continuously has been found to cause modulation of the light output at a frequency within the range 0.5 to several GHz. The modulation depth is close to 100 percent and the ...
New luminescence centers can be generated by irradiating AlxGa1-xAs structures with focused light from a CW Kr-ion laser operated at 647 nm. The luminescence centers are generated at a laser power density of 0.5 MW/cm2. Regions as small as 0.8 μm wide a ...
