Growth of GaAs nanowires on Si (111) for photovoltaic applications
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The advantages and limitations of photovoltaic solar modules for energy generation are reviewed with their operation principles and physical efficiency limits. Although the main materials currently used or investigated and the associated fabrication techno ...
The aim of this paper is to present a novel approach to pattern silicon nanowires for advanced electronics applications. A simple non-lithographic process was successfully developed to define sub-40nm diameter silicon wires and to connect them to test pads ...
Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resist ...
We report the observation of confined modes in the mixed photon/exciton-like branches of exciton-polaritons propagating along the growth axis of a 700 nm-thick GaN film, deposited by Molecular Beam Epitaxy on bulk GaN substrates. The energies of the confin ...
During the past five years, we have developed in our laboratory a new type of solar cell that is based on a photoelectrochemical process. The light absorption is performed by a monolayer of dye (i.e., a Ruthenium complex) that is adsorbed chemically at the ...