Publication

Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

Mihai Adrian Ionescu, Mariazel de la Candelas Maqueda López, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Emanuele Andrea Casu
2016
Conference paper

Abstract

A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.

Official source

https://infoscience.epfl.ch/record/221636?ln=en

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Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

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