Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach
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High resolution transmission electron microscopy (HRTEM) and X-ray energy dispersive spectroscopy (EDS) were applied to study the structure of hydroxyapatite (HAP) coatings deposited by plasma spraying on different substrates (Cu, Cr, Ni, NaCl, BaF2). Coat ...
Scanning capacitance microscopy and electrostatic force microscopy have been used to characterize commercial semiconductor devices at various stages of the fabrication process. These methods, combined with conventional atomic force microscopy, allow to vis ...
We analyze the transport through a narrow ballistic superconductor–normal-metal–superconductor Josephson contact with nonideal transmission at the superconductor–normal-metal interfaces, e.g., due to insulating layers, effective mass steps, or band misfits ...
Innovative structured catalysts based on nanoparticles of gold supported on activated carbon fibers (ACF) in the form of woven fabrics are presented for low-temperature CO oxidation. Gold was deposited by adsorption from aqueous solution of ethylenediamine ...
Using the tip of an atomic force microscope, we have manipulated individual carbon nanotubes on a patterned substrate, and have fabricated model nanodevices, including a room temperature field-effect transistor with a channel only 1.6 nm wide, as well as s ...
In this article an integrated force sensor based on a stress-sensing MOS transistor is introduced for applications in scanning force microscopy (SFM) . The sensor configuration will be described, and theoretical and experimental investigations of the sensi ...
This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interfac ...
In this study we used transmission electron microscopy (TEM) to assess the origin of the electrical behaviour of two dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) based upon InAlAs/InGaAs heterostructures grown on InP substr ...
Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be ad ...
Carbon nanotubes are novel materials with unique electrical and mechanical properties. Here we present results on their atomic structure and mechanical properties in the adsorbed state, on ways to manipulate individual nanotubes, on their electrical proper ...