Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
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We have investigated the magnetoresistance of metal-semiconductor hybrid structures at 4.2 K. The devices consisted of polycrystallineAu and an InAs-based heterostructure that hosted a high-mobility two-dimensional electron system. We have varied the elect ...
Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...
Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-mu m CMOS technology and in four proton-irradiated SPADs designed and fab ...
Institute of Electrical and Electronics Engineers2010
This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...
Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
The paper presents an influence of leakage effect observed in capacitive analog memories on learning process in hardware implemented Kohonen neural networks with MOS transistors used as switches connected with information holding capacitors. The learning r ...
We present a new electronic device – the single-electron bipolar avalanche transistor (SEBAT) – which allows for the detection of single charges with a bandwidth typically above 1 GHz, exceeding by far the bandwidth of other room-temperature single-electro ...
A novel sub-threshold inverter based on nanoscale Field Effect Diode (FED) and a basic static CMOS inverter are investigated in this paper. Simulation results demonstrate that power consumption and Power Delay Product (PDP) of the sub-threshold inverter wh ...
