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A semiconductor device such as a DRAM memory device is disclosed. A substrate 12 of semiconductor material is provided with energy band modifying means in the form of a box region 38 and is covered by an insulating layer 14. A semiconductor layer 16 has so ...
Today's world of electronics becomes more and more digital and therefore CMOS becomes the dominant technology. A CMOS process compared to a bipolar process offers several advantages, mainly a low power consumption which is important for portable systems po ...
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
This paper presents a micropower second-order low-pass filter using the log-domain principle and integrated in a 0.35-μm CMOS process. It has been designed as an antialiasing filter for a DECT transceiver with a 45-kHz nominal cutoff frequency. The circuit ...
An entire microsystem for high accuracy magnetic field measurement based on vertical Hall devices has been simulated. In accordance with existing knowledge about semiconductor physics and experimental results, a functional SPICE- model for a vertical Hall ...
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
We connect transistors and proteins in two ways. The first is by showing that they have much in common as fundamental devices of electronics and life. The second is by describing how an evolvable wiring of electronic devices can parallel the wiring of prot ...
The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...
