Nergiz Sahin Solmaz, Mustafa Berke Yelten, Sadik Ilik
This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019