Measuring Nano- to Microstructures from Relayed Dynamic Nuclear Polarization NMR

We show how dynamic nuclear polarization (DNP) NMR can be used in combination with models for polarization dynamics to determine the domain sizes in complex materials. By selectively doping a source component with radicals and leaving the target undoped, we Can measure experimental polarization buildup curves which can be compared with simulations based on heterogeneous distributions of polarization-within the sample. The variation of the integrated DNP enhancement as a function of the polarization time is found to be characteristic of the geometry. We demonstrate the method experimentally on four different systems where we successfully determine domain sizes between 200 and 20 000 nm, specifically in powdered histidine hydrochloride monohydrate) pore lengths of mesoporous silica materials, and two domain sizes in two component polymer film coatings. Additionally, we find that even in the apparently homogeneous frozen solutions used as polarization sources in most DNP experiments, polarization is relayed from protons near the radicals to the bulk of the solution by spin diffusion, which explains the experimentally observed buildup times in these samples.

Approches numériques du transport de charges dans les semiconducteurs organiques

Hocine Houili

Using plastics or dyes like molecular semiconductors to make optoelectronic devices at low cost is a project in industry that is of great interest to the "Information Community" of this beginning of the 21st century. Some applications of this technology have already been realized including flexible flat-panel displays made with organic light-emitting diodes, organic transistors for active matrices, organic solar cells and sensors. In all these applications it is essential to deduce and understand the laws that determine the charge transport and the light emission in these materials. The goal of this thesis is to contribute to the theoretical models that describe these transport processes. In order to predict the behaviour of charge carriers in a given device, one can choose two methods. One can either numerically solve the master equations that describe the general behaviour of charges and currents in each part of the device, or one can simulate the detailed behaviour of each charge in the device by fixing the conditions of its movement using a procedure known as "Monte Carlo". In this thesis I addressed the two approaches. I have been interested successively in the prediction of the electric properties of multilayer light-emitting devices, considered as a whole. Then I was able to understand in detail the processes accruing at the organic-organic interfaces by using the Monte Carlo method. My last project involved the study of the channel of an organic transistor. In each one of these cases I took account of the characteristic features of small molecule organic materials in order to develop models for charge transport for the study and optimization of two important types of organic devices : organic light-emitting diodes and field-effect transistors. Amorphous organic semiconductors are mainly used for the fabrication of organic diodes. They are characterized by an energetically disordered density of states that is assumed to be Gaussian. The transport of charges in these materials occurs via hopping from one molecule to another in this density of states. The correlations between the energies of the molecular sites have important effects on transport ; the dependence of mobility on the applied electric field in particular. If the energetic disorder is due to the random orientations of the permanent dipoles of the molecules, then the correlations between the orientations of these dipoles can profoundly change the spatial configuration of the energetic disorder and consequently the charge transport. Due to the fact that organic diodes often comprise of multiple organic layers, understanding device behaviour at the organic-organic interfaces is of critical importance. Electrons and holes accumulate close to these interfaces and they are therefore more likely to recombine and emit light. The Coulomb interactions between the charge carriers and the energy disorder are at the origin of complex processes taking place at these accumulation regions. I studied these processes through a 3D multi-particle Monte Carlo simulation. The short-range Coulomb repulsion forbids the double-occupancy of the sites and shifts the energy level for injection of carriers across the interface upward, thus increasing the electric current of the diode. The long-range Coulomb interactions increase the electric field and the current at the interface although this increase is less important than suggested by 1D models. Effects related to the hopping process such as the effect of the exact form of the hopping law and backward or return hop at the interface are clearly discussed. The Monte Carlo simulations are cross-compared with an analytical model for hopping transport across the interface. This comparison made it possible to understand other aspects of the physical processes at organic-organic interface and supports the Monte Carlo simulations. The study of the electron-hole recombination showed a decrease of the cross-section with an increase of the applied electric field, but this decrease is less than what can be expected by the classical Langevin theory. In spite of their efficiency, Monte Carlo simulations are not attractive when modelling complex multi-layer diodes. The 1D models are better suited in this case. A 1D model called MOLED, which was developed at Laboratoire d'Optoélectronique des Matériaux Moléculaires (LOMM) for the simulation of the organic diodes, is used and described in detail in this thesis. We used MOLED to explore the effect of the energy correlations on the electric field dependence of the mobility. In fact we simulated the time-of-flight experiment, a common method used to determine of the carrier mobility. The crystalline organic semiconductors achieve mobility performances close or even better than amorphous silicon. Their use for the fabrication of field-effect transistors is thus a good choice. The models for charge transport in crystalline organic materials differ much from their counterparts for amorphous organic materials. Indeed band models are more appropriate to describe charge transport in crystalline organic materials. However it is very important to take into account the effects of electronic polarization in these models. I developed a method of calculation of these effects of polarization in the bulk of the organic semiconductor and I extended it to the case of the interface with a dielectric insulator, a situation encountered in the channel of the organic transistor. These calculations showed that when the polarity of the dielectric increases the inter-molecular transfer integral decreases. This is confirmed by experimental measurements showing increasingly low values of mobility when the permittivity of the insulator increases.

EPFL2006

Ab Initio Derived Force Fields for Predicting CO2 Adsorption and Accessibility of Metal Sites in the Metal-Organic Frameworks M-MOF-74 (M = Mn, Co, Ni, Cu)

Peng Bai, Wendy Lee Queen

Metal-organic frameworks (MOFs) are versatile nanoporous materials that have gained significant interest as low heat capacity, high selectivity sorbents for CO2 capture applications. Large-scale atomistic simulations for identifying high-performance MOFs are possible, but are limited to systems for which existing molecular mechanics force fields describe the interactions between the guest and framework atoms with sufficient accuracy. However, standard force fields are not applicable to cases involving coordinatively unsaturated metal centers that can strongly bind specific sorbate molecules. It has been previously shown that improved force fields can be derived from quantum mechanical calculations. In this work, we derived force fields for an isostructural series of MOFs, M-MOF-74, where M = Mn, Co, Ni, and Cu, from first principles. Monte Carlo calculations in the Gibbs ensemble were used to calculate the CO2 adsorption isotherms in order to assess the quality of the derived force field parameters and to determine a generally applicable procedure for obtaining a reliable force field for a targeted MOF and adsorbate system. The computed CO2 adsorption isotherms for the different M-MOF-74 members agree with experimental measurements at low loading and show that Ni-MOF-74 possesses the highest affinity toward CO2 and Cu-MOF-74 the weakest. In addition, we explored the source of open metal site and pore inaccessibility in these materials and quantified its impact on adsorption, especially the discrepancies often observed between experiments and simulations at high loadings.

Amer Chemical Soc2015

Approches numériques du transport de charges dans les semiconducteurs organiques

Hocine Houili

EPFL2006