Publication

Three-Dimensional Nano-Acoustic Bragg Reflectors for CMOS Embedded NEMS

Related publications (45)

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS

Andreas Peter Burg, Pascal Andreas Meinerzhagen, Oskar Andersson

Ultra-low power (ULP) biomedical implants and sensor nodes typically require small memories of a few kb, while previous work on reliable subthreshold (sub-Vt) memories targets several hundreds of kb. Standard-cell based memories (SCMs) are a straightforwar ...

2012

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Single-photon Avalanche Diodes in sub-100nm Standard CMOS Technologies

Edoardo Charbon, Hyungjune Yoon, Mohammad Azim Karami

Single-photon avalanche diodes (SPADs) are evaluated in two sub-100nm CMOS technologies. Several geometries are implemented, whereas premature edge breakdown (PEB) prevention is achieved with n-well rings. The octagonal SPADs are implemented in 90nm and 65 ...

2011

Microelectronics Meets Biology

Emile Dupont

Microfluidics plays a key role in the design of automated platforms for realizing biological assays in a miniaturized format. Several advantages are offered by a microfluidic system, namely, low sample and reagent consumption (typically a few microliters), ...

EPFL2010

Production of high quality carbon nanotubes for less than $1 per gram

László Forró, Arnaud Magrez, Marijana Mionic Ebersold, Martial Duchamp, Rita Smajda, Juan Carlos Andresen

In this article, we report on the mass production of carbon nanotubes using a continuous production system based on a rotary tube furnace. At first, we have optimized the composition of the metallic nanoparticles. Bimetallic Fe2Ni and Fe2Co alloys exhibit ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2010

Nanogap MEM resonators on SOI

Nicoleta-Diana Ciressan

Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...

EPFL2009

Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor

Mihai Adrian Ionescu, Dimitrios Tsamados, Daniel Grogg, Marco Mazza, Hüseyin Cumhur Tekin, Nicoleta-Diana Ciressan

The fabrication, design, and characterization of high-quality factor microelectromechartical (MEM) resonators fabricated on thin-film silicon-on-insulators (SOIs) are addressed in this paper. In particular, we investigate laterally vibrating bulk-mode reso ...

Institute of Electrical and Electronics Engineers2009

Phase–frequency detecting time-to-digital converter

Kyojin Choo

A simple time-to-digital converter (TDC), capable of detecting not only phase difference but also frequency difference, is presented. The proposed TDC guarantees pull-in even for PLLs with the lowest loop gain. The TDC is fabricated in a 65 nm CMOS process ...

2009

Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

Mihai Adrian Ionescu

Capacitive measurement of very small displacement of nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is shown that performance is fairly improved when integrating on a same die the NEMS and CMOS electronic ...

Institute of Electrical and Electronics Engineers2009