Bioresorbable Frequency-Selective Magnesium Microresonators Fabricated by Ion Beam Etching
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A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pre ...
There is growing interest in using alternative, resistless patterning techniques. Stencil lithography or shadow masking is one of the possible solutions. By means of physical vapor deposition many different materials can be evaporated in vacuum and pattern ...
Electron Beam Induced Deposition (EBID) allows deposition of three-dimensional micro- and nano-structures of conductive and insulating materials on a wide range of substrates. The process is based on the decomposition of molecules of a pre-selected precurs ...
Recently, some research effort has been instigated towards micro and nano patterning of curved surfaces, as system miniaturization by means of patterned planar surfaces has practically reached its limits. In contrast to the more practical approach of exist ...
The anodic oxidn. of H2SO4 to H2S2O8 was investigated on B-doped synthetic diamond electrodes obtained by hot filament chem. vapor deposition. High current efficiency for H2S2O8 formation can be achieved in concd. H2SO4 (7.5 mol dm-3) and using high curren ...
There is a need for chemically resistant coatings that protect the exposed surface of microfluidics components. Pinhole free films with low stress and a good uniformity on flat and inclined surfaces are required. In this study, amorphous silicon carbide (S ...
Hydrogenated polymorphous silicon (pm-Si:H) is a new material obtained by plasma-enhanced chemical vapour deposition by running the plasma close to powder formation. Preliminary studies have revealed the presence of silicon nanocrystallites embedded in an ...
B-doped diamond films were deposited by large-area hot filament chem. vapor deposition (HFCVD) on Si and different industrial electrode materials, such as Ti, Zr, Nb, Ta, W, and graphite, with areas up to 50 * 60 cm2. B-doping levels ranging from 50 to sev ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
The photolytic laser chem. vapor deposition (LCVD) rate of Pt from its hexafluoroacetylacetonate complex precursor was measured in situ and in real time. Optical transmission of the 350 nm photolysis light through the deposited Pt film and a transparent gl ...