Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors
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Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the dielectric; this interface is crucial for transistor performance. The goal of this thesis is to study the effect of thi ...
We present a gate-dependent Raman spectroscopy and electric transport measurements of an individually connected multiwall carbon nanotube in the field-effect transistor configuration at room temperature. We discuss the origin of the four distinct sharp mod ...
A novel sub-threshold inverter based on nanoscale Field Effect Diode (FED) and a basic static CMOS inverter are investigated in this paper. Simulation results demonstrate that power consumption and Power Delay Product (PDP) of the sub-threshold inverter wh ...
In this thesis, the electronic structures of low-dimensional carbon allotropes have been studied. In particular, the spatially-resolved photocurrent responses of devices comprising carbon nanostructures were investigated through scanning photocurrent micro ...
We present a new electronic device – the single-electron bipolar avalanche transistor (SEBAT) – which allows for the detection of single charges with a bandwidth typically above 1 GHz, exceeding by far the bandwidth of other room-temperature single-electro ...
MOS Current Mode Logic (MCML) is one of the most promising logic style to counteract power analysis attacks. Unfortunately, the static power consumption of MCML standard cells is significantly higher compared to equivalent functions implemented using stati ...
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We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have bee ...
This paper presents a modeling strategy to simulate the propagation of electrical perturbations induced by direct biasing of substrate junctions. Usually, this is done by identifying parasitic substrate devices such as bipolar transistors. However, mapping ...
Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V-1 s(-1) and the ring osci ...