Publication
Advances in the characterization of nanowire photovoltaic devices
Related publications (130)
Temperature‐dependent performance of silicon heterojunction solar cells with transition‐metal‐oxide‐based selective contacts
Mathieu Gérard Boccard, Julie Amandine Dreon
The temperature coefficient (TC) is an essential figure of merit to accurately evaluate solar cell performance at various operating temperatures and hence enabling the comparison between different cell technologies. Recently, solar cells that use passivati ...
2021A novel approach for SPICE modeling of light and radiation effects in ICs
Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers ...
EPFL2021p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes
Elison de Nazareth Matioli, Luca Nela, Catherine Erine
High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...
2021Optical properties and carrier dynamics in Co-doped ZnO nanorods
Anna Fontcuberta i Morral, Simon Robert Escobar Steinvall, Nicolas Tappy, Aswathi Kanjampurath Sivan
The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic% in the growth solution. Optoele ...
ROYAL SOC CHEMISTRY2021Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes
Sylvain Dunand, Matthew James Large
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety ...
2021Quasi-vertical GaN-on-Si reverse blocking power MOSFETs
Elison de Nazareth Matioli, Alessandro Floriduz, Riyaz Mohammed Abdul Khadar, Chao Liu
We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...
IOP PUBLISHING LTD2021High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing
Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi
In this work we propose and experimentally validate a relaxation spiking oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible me ...
IEEE2021A round Robin-Highliting on the passivating contact technology
Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset, Aditya Chaudhary
The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and Fraunhofer ISE within the H2020 f ...
EDP SCIENCES S A2021Characterisation of Silicon Heterojunction Solar Cells Beyond Standard Test Conditions
The global photovoltaic market is mostly dominated by solar cells based on crystalline silicon (c-Si), which are covering 95% of the market. This thesis concerns silicon heterojunction (SHJ), a high-efficiency technology with a 2% market share in 2018, but ...
EPFL2020Lateral transport in silicon solar cells
Christophe Ballif, Gabriel Christmann, Mathieu Gérard Boccard, Jan Haschke
We investigate lateral charge carrier transport in crystalline silicon solar cells. Under typical operation illumination of high-efficiency solar cells, a significant population of electrons and holes exist in the silicon wafer, leading to a non-negligible ...
AIP2020