Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications
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The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...
In recent years, the semiconductor industry has turned its focus towards heterogeneous multi-processor platforms. They are an economically viable solution for coping with the growing setup and manufacturing cost of silicon systems. Furthermore, their inher ...
The present work analyzes the impact of ferroelectric materials like PZT when integrated in a standard 0.5µm CMOS process in order to realize nonvolatile memories. The project has been initiated conjointly by the Swiss Federal Institute of Technology of La ...
The equivalent English title: "Design of Custom Networks-on-Chip with Physical Layout Information" Abstract translated into English: Due to the growing demand of communication between processors and memory devices in Systems-on-Chip (SoCs), recently the ne ...
A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arran ...
