Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications
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The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...
The equivalent English title: "Design of Custom Networks-on-Chip with Physical Layout Information" Abstract translated into English: Due to the growing demand of communication between processors and memory devices in Systems-on-Chip (SoCs), recently the ne ...
The present work analyzes the impact of ferroelectric materials like PZT when integrated in a standard 0.5µm CMOS process in order to realize nonvolatile memories. The project has been initiated conjointly by the Swiss Federal Institute of Technology of La ...
A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arran ...
In recent years, the semiconductor industry has turned its focus towards heterogeneous multi-processor platforms. They are an economically viable solution for coping with the growing setup and manufacturing cost of silicon systems. Furthermore, their inher ...
