Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors
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Power-electronic inverters are becoming popular for various industrial drives applications. In recent years also high-power and medium-voltage drive applications have been installed. However, the existing solutions suffer from some important drawbacks. Hyb ...
We studied polarization switching of 295 nm thick -oriented-Pb(Zr0.45Ti0.55)O-3 (PZT) thin-film capacitors through a polarization hysteresis loop and piezoelectric force microscopy (PFM) on top of the Pt electrode. Positive voltage pulses of 450 kV/cm ...
The phenomenon of polarization imprint consisting of the development of a preferential polarization state in ferroelectric films is known as one of the major issues impacting the development of high density ferroelectric memories. According to the commonly ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d(33)-loop measurements in individual ...
A non-volatile random access memory (NVRAM) of the type with magnetoresistive memory elements (1) connected by sets of non-intersecting conductor sense lines (3, 4) which define the address of each memory element (1) and are connectable to a magnetic write ...
The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt ...
Direct observation of polarization distribution at nanoscale by scanning force microscopy across partially etched Pb(Zr,Ti)O-3 film ferroelectric capacitors with size 2x3 mum and preferential orientation (111) has revealed an anomalous polarization pattern ...
Capacitors in metal-insulator-metal structure have been fabricated with different bottom electrodes. It has been found that the observed losses are enormous at gigahertz frequencies unless due care is taken not only for the conductivity of the bottom elect ...