Two- to three-dimensional crossover in a dense electron liquid in silicon
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Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum rela ...
Recently electrically conducting SPM probes were used as read/write sensor of magneto-resistive nanopillars and ferroelectric domains in the development of >1 Tb/inch2 data storage. Since metal coated (platinum (Pt) or Pt/iridium) silicon (Si) probes are n ...
Photonic crystal (PC) cavities enable localization of light into volumes (V) below a cubic optical wavelength (smaller than any other types of optical resonators) with high quality (Q) factors [1]. This permits a strong interaction of light and matter, whi ...
We report a low-temperature photoluminescence study of a series of AlxGal-xN/GaN quantum wells of various widths L and with x ranging from 0.11 to 0.25, grown by molecular beam epitaxy on silicon (111) substrates. Such quantum wells are subject to an impor ...
We present an experimental and theoretical study of the size dependence of the coupling between electron-hole pairs and longitudinal-optical phonons in Ga1-xInxN/GaN-based quantum wells and quantum boxes. We found that the Huang-Rhys factor S, which determ ...
Specimen charging under X-ray illumination is a well known phenomenon that can seriously obstruct the analysis of insulating samples. Synchrotron X-PEEM spectromicroscopy can reach a lateral resolution of 20 nm, 1-2 orders of magnitude larger than electron ...
Photoluminescence lifetimes of the n = 2 level in a large quantum well show a clear nonmonotonic dependence on the density of optically generated carriers. Varying the power density over five orders of magnitude we prove directly the high efficiency of car ...
The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
We have studied the luminescence of narrow quantum wires at photoexcitation densities of up to similar to 3 x 10(6) cm(-1). We show that even at these densities, which are well above the expected Mott density of 8 x 10(5) cm(-1), excitonic recombination do ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...