Publication
Suppression of the quantum-confined Stark effect in polar nitride heterostructuresis
Related publications (13)
Interaction between site-controlled quantum dot systems and photonic cavity structures
The goal of this thesis was to investigate light-matter interaction in nanophotonic devices based on site-controlled pyramidal quantum dots (QD) in photonic crystal (PhC) cavities. These QDs provide position and spectral control, which is hardly achievable ...
EPFL2017Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires
We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodolum ...
Amer Physical Soc2016M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Georg Rossbach
We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...
Amer Chemical Soc2014Optical bistability in InGaN-based multisection laser diodes
Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Luca Alex Milo Sulmoni
Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is ...
2011Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets
Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Eric Feltin, Jean-Daniel Ganière, Pierre Michel Corfdir, Dobri Simeonov
We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...
V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011Dynamic switching of hole character and single photon polarization using the quantum confined Stark effect in quantum dot-in-dot structures
Elyahou Kapon, Valentina Troncale
The engineering of the three-dimensional (3D) heterostructure potential in GaAs/AlGaAs pyramidal quantum dot-in-dots (DiDs) provides control over the valence band symmetry and hence on the polarization of the emitted photons. We propose a technique for dyn ...
Institute of Physics2010Synthesis and optical investigation of single polar GaN/AlN quantum dots
Over the past few decades, III-V nitrides have attracted much attention due to the possibility to realize high efficiency optoelectronic devices covering all the UV and visible part of the light spectrum. However, the device fabrication has gone much faste ...
EPFL2009Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions
High quality GaN/AlGaN multiquantum well (QW) structures were grown by ammonia molecular beam epitaxy along the (0001) polar and (11 (2) over bar0) nonpolar directions. Each sample contains three QWs with thicknesses of 2, 3, and 4 nm as well as 10 nm Al0. ...
2009Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Jacques Levrat, Dobri Simeonov, Massimo Gurioli
We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with incre ...
2008Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
We analyze the room temperature photoluminescence properties of several multilayer stackings of GaN/AlN quantum dots. We report drastic differences of emission energies and linewidths between continuous wave and time-resolved photoluminescence experiments. ...
2004