Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The present study aims at a better understanding of the high piezoelectric properties encountered in lead-based ferroelectrics by focusing on the extrinsic contributions to the response. The main characteristics of these materials are the highly nonlinear ...
A ferroelectric film capacitor structure (FeCAP), in particular for memory applications, comprises a layer of doped ferroelectric material between facing electrodes having a varying/asymmetric doping profile, the concentration of the dopant in the ferroele ...
Ferroelectric thin films are widely studied nowadays as potential replacements for semiconductors in modern tunable microwave devices such as tunable filters, phase-shifters, frequency mixers, power dividers, etc. Recent progress in the deposition of compl ...
We achieved parallel nanoscale patterning of ferroelectric complex oxides by pulsed laser deposition through a nanostencil (i.e., through a pattern of apertures in a thin free-standing membrane). Ordered arrays of nanostructured barium titanate (BaTiO3) we ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
We report a first-principles investigation of ultrathin BaTiO3 films with SrRuO3 electrodes. We find that the ionic relaxations in the metal-oxide electrode play a crucial role in stabilizing the ferroelectric phase. Comparison with frozen-phonon calculati ...
Hysteretic and nonlinear dielectric behaviour in ferroelectric ceramics has been of interest since 1950s, when these materials found application in various electronic devices. Presently, these phenomena concern with important areas of science, technology a ...
Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation and prediction of the properties of ferroelectric devices including nonvolatile memories. The widely accepted approach based on the domain wall motion kine ...
The effect of magnesium addition on the phase formation, microstructure and electric and ferroelectric properties of LiNbO3 thin films prepared through polymeric precursors was analyzed. By X ray diffraction no secondary phase was observed with the increas ...
The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...