Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study
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We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the ...
With growing concerns on future energy supplies, solar energy appears as an energy source whose potential remains to be tapped at a large scale. In the last two decades, dye-sensitized solar cells (DSCs) have been considered as a competitive means to conve ...
With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or ...
Polycrystalline zinc oxide (ZnO) films, prepared by low-pressure chemical vapor deposition are investigated in this thesis. ZnO belongs to the class of transparent conductive oxide materials, as it is transparent to light from the visible to the near-infra ...
Mesoscopic sensitized solar cells are one of the most promising third-generation photovoltaic technologies. Dye-sensitized solar cells (DSCs), imitating the photosynthesis of green plants, were the first photovoltaic devices to utilize a mesoscopic heteroj ...
This paper describes the fabrication of functional optical devices by sectioning quantum-dot-in-nanowires systems with predefined lengths and orientations. This fabrication process requires only two steps, embedding the nanowires in epoxy and using an ultr ...
The effect of He on the primary damage induced by irradiation in ultrahigh-purity (UHP) Fe and Fe(Cr) alloys was investigated by transmission electron microscopy (TEM). Materials were irradiated at room temperature in situ by TEM in a microscope coupled to ...
We demonstrate the correspondence between charge transition levels of localized point defects in hybrid density functional theory and in G(0)W(0) many-body perturbation theory. To achieve this correspondence, it is necessary to properly combine the treatme ...
Arsenic 2p core-level shifts at GaAs/Al2O3 interfaces are determined with respect to bulk GaAs through density functional calculations. Atomistic interface models are constructed in which As atoms are found in various chemical environments. Both Ga-termina ...
Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous e ...