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The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...
Graphene has some drawbacks, like the absence of an electronic band gap which leads to only small gate switching ratios, and its fast carrier recombination that limits its use in optoelectronics. In order to overcome these issues, the aim of this thesis wa ...
Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for ac ...
Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...
Monolayer transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2), tungsten diselenide (WSe2) and tungsten disulfide (WS2), have shown in the last years remarkable physical properties. These direct badgap three-atoms thick monolayers, wi ...
A variety of smart imaging and neuromorphic applications perform time-domain image acquisition in order to imitate biological systems and reduce the growing transmission bandwidth of the modern imaging devices. Because they operate in time-domain, they req ...
During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...
Thin-film solar cells based on amorphous and microcrystalline silicon require thin photoactive layers to ensure a satisfactory collection of the photogenerated carriers. The small thickness is advantageous in terms of raw material consumption and industria ...
Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition ...
Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable output r ...