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Carrier injection from amorphous silicon into crystalline silicon determined with photoluminescence

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Micro-Channel Plate Detectors Based on Hydrogenated Amorphous Silicon

Christophe Ballif, Sylvain Dunand, Matthieu Despeisse, François Eric Powolny

A new type of micro-channel plate detector based on hydrogenated amorphous silicon is proposed which overcomes the fabrication and performance issues of glass or bulk silicon ones. This new type of detectors consists in 80-100 μm thick layers of amorphous ...

2010

Mechanisms of wafer sawing and impact on wafer properties

Christophe Ballif, Johann Michler, Mathijs Pieter van der Meer, Adrien Bidiville

Silicon wafer wire-sawing experiments were realized with different sets of sawing parameters, and the thickness, roughness, and cracks depth of the wafers were measured. The results are discussed in relation to assumptions underlying the rolling-indenting ...

Wiley-Blackwell2010

Ion irradiation enhances the mechanical performance of metallic glasses

Johann Michler, Manuel Alexandre Pouchon

We demonstrate that irradiation may enhance the plasticity in metallic glasses by increasing the free-volume content via micropillar compression experiments on an ion-irradiated bulk metallic glass (BMG). Results show that irradiation decreases the flow st ...

Elsevier2010

Effect of substrate roughness on c-oriented AlN thin films

Paul Muralt, Alvaro Artieda, Michela Antonella Barbieri

(001)-textured AlN thin films as needed for bulk acoustic wave devices exhibit large mechanical stress variations as a function of growth substrate properties. We studied the relationship between stress and the surface morphology of a thermally oxidized si ...

2009

TEM characterization of textured silicon heterojunction solar cells

Christophe Ballif, Aïcha Hessler-Wyser, Christian Monachon

Increasing the efficiency of crystalline silicon (c-Si) solar cells requires the reduction of both bulk and interface recombination. Even if bulk recombination is almost suppressed, the symmetry of the crystal lattice is disturbed at the surface and hence, ...

Springer2008

Understanding of passivation mechanism in heterojunction c-Si solar cells

Stefaan De Wolf

Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface passivation of crystalline silicon (c-Si) wafers as utilized in the HIT (heterojunction with intrinsic thin layer) solar cells. We have studied the correlat ...

Materials Research Society2008

Stretched-exponential a-Si:H/c-Si interface recombination decay

Christophe Ballif, Stefaan De Wolf

The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the authors ...

2008

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A heterogeneous charge transport model for microcrystalline silicon based on fluctuation-induced tunneling is presented that fits the low-temperature saturation observed in dark conductivity measurements and accounts for the film microstructure. Excellent ...

2008

In order to obtain a sensor with force resolution better than 100 pN for biomolecular detection, U-shaped piezoresistive cantilevers made of crystalline silicon have been fabricated. The resistors have been defined by ionic implantation of As+, yielding a ...

Elsevier2008

Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si

Jin Won Seo

Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is require ...

Springer-Verlag New York, Ms Ingrid Cunningham, 175 Fifth Ave, New York, Ny 10010 Usa2008