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Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

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Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

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Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

Monolithic Integration of GaN-Based NMOS Digital Logic Gate Circuits with E-Mode Power GaN MOSHEMTs

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

Silicon Nanowires for Biosensing

Conformal Deposition of Conductive Single-Crystalline Cobalt Silicide Layer on Si Wafer via a Molecular Approach

Development of a monolithic near-field optomechanical system

Monolithic Integration of GaN-Based NMOS Digital Logic Gate Circuits with E-Mode Power GaN MOSHEMTs

RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

Silicon Nanowires for Biosensing

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

Conformal Deposition of Conductive Single-Crystalline Cobalt Silicide Layer on Si Wafer via a Molecular Approach

Development of a monolithic near-field optomechanical system

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires