Publication
Reduction of Fermi level pinning at Cu-BP interfaces by atomic passivation
Related publications (52)
Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration
In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...
EPFL2024Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yi Wang
Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...
Bristol2024Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy
Stefano Mischler, Patrik Schmutz, Anna Neus Igual Muñoz, Roland Hauert
Passive films on the superaustenitic stainless steel 1.4652 were studied using angular resolved hard X-ray photo-electron spectroscopy (HAXPES), which provides an increased information depth compared to conventional X-ray photo-electron spectroscopy (XPS). ...
Hoboken2023Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties
Xiao Zhou, Cheng Chen, Pengfei Ou
The contact nature when monolayer blue phosphorus (blueP) interfaces with three transition metal electrodes (i. e., Pd, Ir, and Pt) was unraveled by the ab initio density functional theory calculations. Specifically, n-type Schottky contact is observed for ...
ELSEVIER2022Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yi Wang
Intrinsic and extrinsic pinning and passivation of m-plane cleavage facets of GaN n- p- n junctions were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. On freshly cleaved and clean p-type GaN( 10 1 0) ...
AMER INST PHYSICS2020Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors
Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon
Amongst 2-dimensional (2D) semiconductors of the transition-metal di-chalcogenide (TMDC) family [1], tungsten diselenide (WSe2) has shown ambipolar behavior [2], [3] coupled with high carrier mobility [4] and CMOS-like devices have been experimentally demo ...
IEEE2018Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors
Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon
Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...
2018MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors
Olivier Martin, Mihai Adrian Ionescu, Arnaud Magrez, Andreas Schueler, Anna Krammer, Emanuele Andrea Casu, Chen Yan, Nicolò Oliva
In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...
2018Towards high-performance polarity-controllable FETs with 2D materials, 2018 Design
Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon
As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generation ele ...
IEEE2018Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs
Alfredo Pasquarello, Assil Bouzid
We show that constant-Fermi-level ab initio molecular dynamics can be used as a computer-based tool to reveal and control relevant defects in semiconductor materials. In this scheme, the Fermi level can be set at any position within the band gap during the ...
Amer Physical Soc2017