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First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

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A Geiger Mode APD fabricated in Standard 65nm CMOS Technology

Edoardo Charbon, Hyungjune Yoon

We present the first avalanche photodiode (APD) successfully fabricated in standard 65nm CMOS technology. The APD operates both in proportional and Geiger mode at -60C to +60C temperature range. The device comprises an octagonal n+p-well junction surrounde ...

2013

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

High-angular-range electrostatic rotary stepper micromotors fabricated with SOI technology

Martinus Gijs, Christophe Yamahata, Marc Stranczl

Flexible bearings are advantageous for microelectromechanical systems as they enable precise, accurate, repeatable, and reliable motion without frictional contact. Based on the principle of a rotary folded-beam suspension, we have designed, fabricated, mod ...

Institute of Electrical and Electronics Engineers2012

Platinum TSVs for High-Temperature Processing and Operation of Microsystems

Nico de Rooij, Danick Briand, Terunobu Akiyama, Rokhaya Gueye

We report on the fabrication and characterization of high-temperature Pt-TSVs. A LPCVD silicon nitride passivation layer was implemented to protect the TSVs from oxidation during high-temperature treatments and wet HF-based post-processing steps, the later ...

2012

In-IC Strategies for 3D Devices in Bulk Silicon

Matthieu Bopp

The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...

EPFL2011

Nanoengineered Silicon: Technology and Applications

Sandro Carrara, Lucia Baldi Unser

Silicon has been, and continues to be, the material support of integrated circuit (IC) technology-the enabling tool of one of the most impressive technological, industrial and social revolution of mankind. Silicon (both in monocrystalline and polycrystalli ...

2011

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Giovanni Antonio Salvatore

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

Modal analysis and modeling of a frictionless electrostatic rotary stepper micromotor

Martinus Gijs, Christophe Yamahata, Marc Stranczl

We present the design, modeling and characterization of a 3-phase electrostatic rotary stepper micromotor. The proposed motor is a monolithic device fabricated using silicon-on-insulator (SOI) technology. The rotor is suspended with a frictionless flexural ...

IEEE2011

Microelectronics Meets Biology

Emile Dupont

Microfluidics plays a key role in the design of automated platforms for realizing biological assays in a miniaturized format. Several advantages are offered by a microfluidic system, namely, low sample and reagent consumption (typically a few microliters), ...

EPFL2010

A new single-photon avalanche diode in 90nm standard CMOS technology

Edoardo Charbon, Marek Gersbach, Hyungjune Yoon, Mohammad Azim Karami

We report on the first implementation of a single-photon avalanche diode (SPAD) in 90nm complementary metal oxide semiconductor (CMOS) technology. The detector features an octagonal multiplication region and a guard ring to prevent premature edge breakdown ...

Optical Society of America2010