Publication
Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL
Related publications (38)
Brillouin fiber laser pumped by a DFB laser diode
In this paper, we present a novel Brillouin fiber-ring laser utilizing an unbalanced Mach-Zehnder interferometer (UMZI) as coupling device. The laser is pumped by a distributed-feedback laser diode and shows continuous-wave and single-frequency operation. ...
2003Highly efficient one- and two-cascade Raman lasers based on phosphosilicate fibers
René Salathé, Hans Georg Limberger, Florian Dürr, Marcel Zeller
Characteristics of one-cascade (1.06 double right arrow 1.24 mum) and two-cascade (1.06 double right arrow 1.24 double right arrow 1.48 mum) phosphorus-doped fiber Raman lasers are studied. The cavities of both lasers are formed by Bragg gratings written d ...
2003Optical speedup at transparency of the gain recovery in semiconductor optical amplifiers
Benoît Marie Joseph Deveaud, Marc-André Dupertuis
Experimental demonstration of optical speedup at transparency (OSAT) has been performed on a 1 mm long semiconductor optical amplifiers (SOA). OSAT is a recently proposed scheme that decreases the recovery time of an SOA while maintaining the available gai ...
2002Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor lasers. Design and applications
Romuald Houdré, Daniele Romanini
Summary form only given. We report the demonstration of high output power (>1 W), single frequency and ultra-short pulse operation (
2000Highly efficient optically pumped NH3 laser with near diffraction limited output
We present the design of a highly efficient, pulsed ammonia laser which is optically pumped by a commercial TEA CO2 laser and is line tunable in the spectral range of 780-930 cm(-1). The power, spectral, and temporal characteristics of the laser have been ...
1998Low Threshold 1.55 µm Wavelength InAsP/InGaAsP Strained Multi-Quantum Well Laser Diode Grown by Chemical Beam Epitaxy
Elyahou Kapon, Jean-François Carlin, Alok Rudra
By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal c ...
1997Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays
Franz-Karl Reinhart, Denis Martin, François Morier-Genoud, Martin Achtenhagen
Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented, Threshold current densities in broad area lasers were measured to be as ...
1997InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1..55 mu m
Elyahou Kapon, Jean-François Carlin, Alok Rudra
We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transpare ...
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