Publication

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3

Related publications (41)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3

Graph Chatbot

Chat with Graph Search

Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case

Tuning the giant Rashba effect on a BiAg2 surface alloy: Two different approaches

Formation of substoichiometric GeOx at the Ge-HfO2 interface

The Fermi surface and band folding in La2-xSrxCuO4, probed by angle-resolved photoemission

Cation-site intrinsic defects in Zn-doped CdTe

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels

3D Imaging of the Fermi Surface by Thermal Diffuse Scattering

Atomistic simulations of nanometric dislocation loops in bcc tungsten

Kinks in the angle resolved photoemission and inelastic x-ray spectra of high temperature superconductors