Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3
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Undoped hydrogenated amorphous silicon layers deposited at different values of very high frequency (VHF) powers and silane to hydrogen dilution ratios possess various types of microstructures. Transport and defect measurements on layers suggest that struct ...
We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...
The theoretical analysis of R-fold modular redundancy, cascaded R-fold modular redundancy and NAND multiplexing is presented and these fault-tolerant techniques are compared in terms of resistance to massive levels of defect density. Optimal cluster size a ...
The density of states at the Fermi level N(E-F) has been measured on hydrogenated polymorphous (pm-Si:H) silicon samples using both capacitance measurements on Schottky barriers and space-charge-limited current measurements on n(+)/i/n(+) structures. From ...
We have exploited angle-resolved photoelectron spectroscopy (ARPES) to study the electronic structure of single crystal samples of high T-c material Bi2Sr2CaCu2O8+delta and of the antiferromagnetic insulator Sr2CuO2Cl2. As one moves away from optimal dopin ...
We investigate the structure and mobility of single self-interstitial atom and vacancy defects in body-centered-cubic transition metals forming groups 5B (vanadium, niobium, and tantalum) and 6B (chromium, molybdenum, and tungsten) of the Periodic Table. D ...
Photoelectron spectroscopy reveals a striking correspondence between charge-density-wave-related phase transitions and modifications of the electronic structure in 1T-TaS2. High-energy-resolution spectra indicate that the collapse of the Fermi surface is a ...
The aim of this research project is to study the deposition of thermal atoms and small ionised clusters on well defined surfaces. For this, an installation has been developed at the Institut de Physique Expérimentale to produce mass selected ionic metal cl ...
We propose a method within density functional theory for aligning defect energy levels at interfaces without relying on experimental data. We apply our scheme to the alignment of charge transition levels of the interstitial hydrogen and the hydrogen bridge ...
We developed InGaAsP BRAQWET (barrier, reservoir, and quantum-well electron transfer) structures using numerical modeling to optimize the band structure. The main improvement was achieved by including i,n,i,p-doped layers in the barrier, thus decoupling th ...