Publications related to Contact Resistivity of the p-Type Amorphous Silicon Hole Contact in Silicon Heterojunction Solar Cells

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Christophe Ballif, Raphaël François Lemerle, Mathieu Gérard Boccard, Jan Haschke, Brahim Aissa

In this paper, we report the evolution of silicon heterojunction solar cell properties focusing, in particular, on the indium tin oxide (ITO) layers upon consecutive thermal annealing. We find that the charge carrier density

N_{\rm e}

of the ITO increase ...

2019

Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions

Christophe Ballif, Mathieu Gérard Boccard, Jan Haschke, Jean Cattin, Brahim Aissa, Olivier Denis Dupré

Solar modules are currently characterised at standard test conditions (STC), defined at 1000 W/m2 and 25 °C. However, solar modules in actual outdoor operating conditions typically operate at lower illumination and higher temperature than STC, which signif ...

2019

Gallium Nitride as Transparent Electron-Selective Contact in Silicon Heterojunction Solar Cells

Christophe Ballif, Mathieu Gérard Boccard, Angela Nicole Fioretti, Tzu-Chin Chang Chien, Yashi Xiao

Carrier-selective, passivating contacts have allowed silicon heterojunction (SHJ) cells to reach recordbreaking efficiencies particularly in all-back-contacted designs. However, two-side-contacted SHJ cell efficiency has been limited due in part to parasit ...

2019

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Gizem Nogay

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

Advances in the characterization of nanowire photovoltaic devices

Dmitry Mikulik

III-V nanowires (NWs) have a great potential for solar energy applications due to their diameter-dependent optical properties, which may enhance absorption of light. In addition, core-shell radial p-i-n structures, in which the direction of light absorptio ...

EPFL2018

Low-Intensity High-Temperature (LIHT) Solar Cells for Venus Atmosphere

Giulia Tagliabue

Low-intensity high-temperature solar cells that operate effectively in the atmosphere of Venus at various altitudes and also survive on the 465 °C surface of Venus are being developed. Thermal stability, high-temperature current-voltage (I-V), and external ...

2018

A Study on the Charge Carrier Transport of Passivating Contacts

Gizem Nogay

Recently, the charge carrier transport mechanism of passivating contacts, which feature an ultra-thin oxide layer, has been investigated by studying temperature-dependent current-voltage (I-V) characteristics. The measurement revealed that tunneling is the ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

A passivating contact concept compatible with a short thermal treatment

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philippe Wyss, Josua Andreas Stückelberger

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

IEEE2018

Solar photovoltaic module

Christophe Ballif, Franz-Josef Haug, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger

In the present invention a new solar photovoltaic module is proposed comprising a solar cell comprising a silicon layer having a first (1 a) surface and a second surface (1a) opposite to said first surface. The solar cell further comprises a passivating la ...

2017

Review: Progress in solar cells from hydrogenated amorphous silicon

Christophe Ballif, Franz-Josef Haug, Michael Elias Stückelberger, Rémi Biron

Hydrogenated amorphous silicon (alpha-Si:H) has been used for decades doped and as intrinsic absorber layers in thin-film silicon solar cells. Whereas their effiency was improved for a long time by the deposition of higher quality absorber layers, recent i ...

Elsevier2017

Contact Resistivity of the p-Type Amorphous Silicon Hole Contact in Silicon Heterojunction Solar Cells

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Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions

Gallium Nitride as Transparent Electron-Selective Contact in Silicon Heterojunction Solar Cells

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Advances in the characterization of nanowire photovoltaic devices

Low-Intensity High-Temperature (LIHT) Solar Cells for Venus Atmosphere

A Study on the Charge Carrier Transport of Passivating Contacts

A passivating contact concept compatible with a short thermal treatment

Solar photovoltaic module

Review: Progress in solar cells from hydrogenated amorphous silicon

Advances in the characterization of nanowire photovoltaic devices

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

A Study on the Charge Carrier Transport of Passivating Contacts

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions

A passivating contact concept compatible with a short thermal treatment

Low-Intensity High-Temperature (LIHT) Solar Cells for Venus Atmosphere

Gallium Nitride as Transparent Electron-Selective Contact in Silicon Heterojunction Solar Cells

Review: Progress in solar cells from hydrogenated amorphous silicon

Solar photovoltaic module