Characterisation of Silicon Heterojunction Solar Cells Beyond Standard Test Conditions

The global photovoltaic market is mostly dominated by solar cells based on crystalline silicon (c-Si), which are covering 95% of the market. This thesis concerns silicon heterojunction (SHJ), a high-efficiency technology with a 2% market share in 2018, but showing a steady global production capacity growth and potential for industry-compatible modules with a conversion efficiency above 21%. This thesis focuses on improving the device efficiency in real operating conditions. More specifically, different effects affecting a cell used in non-standard conditions are assessed, including different temperatures and illuminations, during prolonged exposure to light and the effect of surface inhomogeneities. The main SHJ technology specificity consists of the use of thin hydrogenated amorphous silicon (a-Si) layers that provide excellent c-Si surface passivation. This enables very high operating voltages compared to other c-Si-based technologies, which directly reduces the loss of efficiency induced by higher operating temperatures. The cell's properties are measured at very low temperatures are studied, which amplifies charges transport phenomena. The voltage shows a deviation from its theoretical curve, which we explain to be related to a decrease of the positive contact holes selectivity due to the influence of the transparent conductive oxide layer. An increase in the resistive losses at low temperature is measured. These losses are caused by a resistivity increase in the different a-Si layers and interfaces because of a thermal energy decrease at low temperatures. These effects may also affect cell performances at room temperature and under operating conditions. This implies that optimisation at standard test conditions (STC), generally used to assess the performance of PV modules, does not necessarily result in the same optimum as in real climatic conditions, which generally correspond to a higher temperature and/or a lower illumination. We show that by adding carbon in the front doped layer, a transparency increase, and thus a current gain is observed at the expense of larger ohmic losses, which overall reduces the efficiency at STC. Using simulations and real climate data, we show that using such a layer leads to a relative energy production gain of 0.5 to 0.8%, both in a moderate and arid climate. Another specificity of SHJ cells is a slight efficiency increase when exposed to light for a few days. We show that in case of a too-small positive doped layer charges reserve, cell performance degradation is observed instead of an improvement. In order to avoid such degradation, the positively doped layer should be sufficiently thick and doped to screen the influence of the subsequent transparent conductive oxide layer. A treatment in which a forward bias voltage is applied to the cell allows triggering the gain in efficiency without causing the detrimental effects of light exposure. Finally, the influence of a non-homogeneous surface is studied. Parasitic electric currents are induced between the well-passivated area and poor passivation area through the metallisation. Using dedicated samples, correspondence between these currents, and an often measured drop of the low injection lifetime is described and linked to the detrimental effect of either the sample edges or by surface defects. Concretely, these effects can affect the performances of the cell at low illumination, reducing the performances in real outdoor conditions.

Window Layers for Silicon Heterojunction Solar Cells

Johannes Peter Seif

Currently, crystalline silicon (c-Si) wafer-based solar cells dominate the photovoltaic market (80-90%). In this thesis we concentrate on silicon heterojunction (SHJ) solar cells that--in contrast to diffused homojunction cells--rely on the application of amorphous silicon (a-Si:H) thin films. Unlike standard homojunction devices, which are typically limited by their highly recombination-active semiconductor-to-metal contacts, SHJ devices exhibit excellent surface passivation enabled by intrinsic and doped a-Si:H films. These a-Si:H layers, however, entail drawbacks for optical performance and carrier transport, two topics that will be addressed in this work. To this end we investigate non-traditional materials for SHJ devices, with the goal of replacing the a-Si:H or the transparent electrodes. These materials include microcrystalline silicon (uc-Si:H) and organic semiconductors for contact formation; amorphous silicon suboxides (a-SiOx:H) for surface passivation; and transparent electrodes applied by atomic layer deposition (ALD) as protective layers against subsequent processing steps. Along with the optical and electrical properties of these materials, we study the impact on device performance associated with their deposition. For this we test the devices under standard testing conditions (25 °C) and at elevated temperatures closer to those encountered in the field. For the investigations on uc-Si:H layers, we vary process parameters (including temperature, pressure, power, excitation frequency and hydrogen dilution) as well as pre-treatments, gas variations and nucleation layers. We assess the suitability of these approaches for SHJ solar cells and apply selected measures in devices. Thereby we demonstrate a gain in short-circuit current density in the range of 0.5-1 mA.cm-2 and good fill factor values of up to 79.2% using either n- and p-type uc-Si:H layers. Furthermore, with the goal of reducing optical losses, we test wide-bandgap a-SiOx:H layers for passivation. In terms of current gain without negative side effects on transport, we argue that these layers are best applied to the electron-collecting contact--put at the front of the device--as their application to the hole-collecting contact introduces a transport barrier for holes. This barrier deteriorates the device performance at 25 °C, but shows a beneficial effect on the temperature coefficient of the device, yielding coefficients as low as -0.1%/°C. In some cases--compared to standard devices--devices with a-SiOx:H layers exhibit superior performance at elevated temperatures, which can be of interest in warmer climates. In parallel to these main topic we also study aluminium-doped zinc oxide (ZnO:Al) layers deposited by ALD as a protective layer against sputter-induced damage and organic semiconductors as transparent electrodes for the hole-collecting contact. In both cases we observe a gain in terms of surface passivation, which indicates that these materials may be beneficial for the contact formation in future device structures. In addition to these material-related investigations, we unravel the temperature-dependence of each individual cell parameter and present a brief comparison of state-of-the-art technologies and their respective temperature dependence.

EPFL2015

A miniaturised autonomous sensor based on nanowire materials platform: the SiNAPS mote

Maher Kayal, Naser Khosro Pour

A micro-power energy harvesting system based on core(crystalline Si)-shell(amorphous Si) nanowire solar cells together with a nanowire-modified CMOS sensing platform have been developed to be used in a dust-sized autonomous chemical sensor node. The mote (SiNAPS) is augmented by low-power electronics for power management and sensor interfacing, on a chip area of 0.25mm(2). Direct charging of the target battery (e. g., NiMH microbattery) is achieved with end-to-end efficiencies up to 90% at AM1.5 illumination and 80% under 100 times reduced intensity. This requires matching the voltages of the photovoltaic module and the battery circumventing maximum power point tracking. Single solar cells show efficiencies up to 10% under AM1.5 illumination and open circuit voltages, Voc, of 450-500mV. To match the battery's voltage the miniaturised solar cells (similar to 1mm(2) area) are connected in series via wire bonding. The chemical sensor platform (mm 2 area) is set up to detect hydrogen gas concentration in the low ppm range and over a broad temperature range using a low power sensing interface circuit. Using Telran TZ1053 radio to send one sample measurement of both temperature and H-2 concentration every 15 seconds, the average and active power consumption for the SiNAPS mote are less than 350nW and 2.1 mu W respectively. Low-power miniaturised chemical sensors of liquid analytes through microfluidic delivery to silicon nanowires are also presented. These components demonstrate the potential of further miniaturization and application of sensor nodes beyond the typical physical sensors, and are enabled by the nanowire materials platform.

Spie-Int Soc Optical Engineering2013

Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

Christophe Ballif, Stefaan De Wolf, Antoine Descoeudres, Johannes Peter Seif

In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit voltages can be maintained, thanks to good interface passivation. However, we find that the gain in current is more than offset by losses in fill factor. Aided by device simulations, we link these losses to impeded carrier collection fundamentally caused by the increased valence band offset at the amorphous/crystalline interface. Despite this, carrier extraction can be improved by raising the temperature; we find that cells with amorphous silicon oxide window layers show an even lower temperature coefficient than reference heterojunction solar cells (-0.1%/K relative drop in efficiency, compared to -0.3%/K). Hence, even though cells with oxide layers do not outperform cells with the standard design at room temperature, at higher temperatures—which are closer to the real working conditions encountered in the field—they show superior performance in both experiment and simulation.

American Institute of Physics2014

Window Layers for Silicon Heterojunction Solar Cells

Johannes Peter Seif

EPFL2015