Publication
Magnetic Skyrmions: From Fundamental Physics to Topological Electronics
Related publications (37)
2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing
Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...
EPFL2023How to Achieve Large-Area Ultra-Fast Operation of MoS 2 Monolayer Flash Memories?
Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Zhenyu Wang, Asmund Kjellegaard Ottesen, Yanfei Zhao, Guilherme Migliato Marega, Hyungoo Ji
Memory devices have returned to the spotlight due to increasing interest in using in-memory computing architectures to make data-driven algorithms more energy-efficient. One of the main advantages of this architecture is the efficient performance of vector ...
2023Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2
Andras Kis, Guilherme Migliato Marega
Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges
Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...
EPFL2021Perovskite Flash Memory with a Single-Layer Nanofloating Gate
Mohammad Khaja Nazeeruddin, Peng Gao, Hobeom Kim
Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...
2020Logic-in-memory based on an atomically thin semiconductor
Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Zhenyu Wang, Ahmet Avsar, Yanfei Zhao, Guilherme Migliato Marega
The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...
2020ReRAM From Material Study to CMOS Co-integration
The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...
EPFL2019Fine-Grain Checkpointing with In-Cache-Line Logging
James Richard Larus, David Teksen Aksun, Nachshon Cohen
Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the cos ...
ACM2019Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices
Mihai Adrian Ionescu, Igor Stolichnov
Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...
IEEE2018Resistive Switching Memory Architecture Based on Polarity Controllable Selectors
Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon
With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...
2018