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GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

Related publications (32)

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Electrical contacts to two-dimensional semiconductors

Andras Kis, Adrien Victor Allain

The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as wel ...

Nature Publishing Group2015

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

The analysis of quantum mechanical confinement in recent germanium electron-hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that cons ...

American Institute of Physics2014

Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study

Nava Setter, Nicola Marzari, Dragan Damjanovic, Anand Chandrasekaran

The properties of ferroelectric materials, such as lead zirconate titanate (PZT), are heavily influenced by the interaction of defects with domain walls. These defects are either intrinsic or are induced by the addition of dopants. We study here PbTiO3 (th ...

Amer Physical Soc2013

Nonlinear Quantum Optomechanics via Individual Intrinsic Two-Level Defects

Tobias Kippenberg, Vivishek Sudhir

We propose to use the intrinsic two-level system (TLS) defect states found naturally in integrated optomechanical devices for exploring cavity QED-like phenomena with localized phonons. The Jaynes-Cummings-type interaction between TLS and mechanics can rea ...

American Physical Society2013

This thesis is devoted to theoretically study the systems of single quantum dots (QDs) embedded in various photonic nanostructures, in close relation with experimental data. The word single is essential: due to their nanometer size, QDs have mainly been st ...

EPFL2011

Dynamic fragmentation of ceramics, signature of defects and scaling of fragment sizes

Jean-François Molinari, Sarah Levy

Defects play a critical role in the dynamic fragmentation process of structural ceramics. Cracks initiate at seemingly random locations, propagate and coalesce to form fragments. The process is accompanied by stress release waves, whose influence is diffic ...

Elsevier2010

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We show a double path mechanism for the formation of charged excitons (trions); they are formed through bi- and trimolecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum well, even in the absenc ...

2009

This work aims at a better understanding of transport mechanisms which take place in organic semiconductors such as pentacene. More accurately, we believe that the electronic polarization plays a leading part, which we try to identify in the particular cas ...

EPFL2006

The present doctoral thesis aims to contribute to the field of organic semiconductor physics and technology, both of which have become fast growing disciplines. Two technological applications are emerging from these research efforts: Organic light-emitting ...

EPFL2006

Semiconductor device

Serguei Okhonin

A semiconductor device such as a DRAM memory device is disclosed. A substrate 12 of semiconductor material is provided with energy band modifying means in the form of a box region 38 and is covered by an insulating layer 14. A semiconductor layer 16 has so ...

2004