C-H Bond Activation by an Isolated Dinuclear U(III)/U(IV) Nitride
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Due to their high hardness, high melting point and high chemical stability, transition metal nitrides present a great interest for various applications. This work constitutes a contribution to the understanding of the properties of Nb based binary and tern ...
Multi-element oxynitrides of type Al-Cr-Si-O-N were prepared using r.f. magnetron sputtering from Al80Cr2.5Si17.5 (at.%) target composition and O-2/(O-2+N-2) gas flow ratio between 0 and 100%. Two series of samples varying from pure nitrides to pure oxides ...
Using a first-principles approach, we investigate nitrogen bonding configurations at nitrided Si(001) surfaces and Si(001)-SiO2 interfaces by comparing calculated core-level shifts with measured photoemission spectra. Fully relaxed model structures are gen ...
NH3 is used as a nitrogen precursor for growing III-V nitride materials by molecular beam epitaxy on c-plane sapphire substrates. The sapphire nitridation step is followed in situ by reflection high-energy electron diffraction. Subsequently, it is demonstr ...
The microstructure and chemical composition of sputtered thin films are strongly correlated with the deposition conditions. In the present work, we report the investigation of the film composition by electron probe microanalysis and photoemission experimen ...
Boron nitride films were deposited by r.f. capacitively-coupled plasma (13.56 MHz) using two different gas mixtures: Ar-B2H6-NH3 and Ar-B2H6-N-2. In order to study the gas-phase reactions of the plasma in situ Fourier transform infrared absorption spectros ...
The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dE(g)/dp, exhibit ...
Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacito ...