JFETThe junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between source and drain terminals.
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Strongly correlated materialStrongly correlated materials are a wide class of compounds that include insulators and electronic materials, and show unusual (often technologically useful) electronic and magnetic properties, such as metal-insulator transitions, heavy fermion behavior, half-metallicity, and spin-charge separation. The essential feature that defines these materials is that the behavior of their electrons or spinons cannot be described effectively in terms of non-interacting entities.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Saturation velocitySaturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property.
High frequencyHigh frequency (HF) is the ITU designation for the range of radio frequency electromagnetic waves (radio waves) between 3 and 30 megahertz (MHz). It is also known as the decameter band or decameter wave as its wavelengths range from one to ten decameters (ten to one hundred meters). Frequencies immediately below HF are denoted medium frequency (MF), while the next band of higher frequencies is known as the very high frequency (VHF) band. The HF band is a major part of the shortwave band of frequencies, so communication at these frequencies is often called shortwave radio.
Logic gateA logic gate is an idealized or physical device that performs a Boolean function, a logical operation performed on one or more binary inputs that produces a single binary output. Depending on the context, the term may refer to an ideal logic gate, one that has, for instance, zero rise time and unlimited fan-out, or it may refer to a non-ideal physical device (see ideal and real op-amps for comparison). In the real world, the primary way of building logic gates uses diodes or transistors acting as electronic switches.
Power electronicsPower electronics is the application of electronics to the control and conversion of electric power. The first high-power electronic devices were made using mercury-arc valves. In modern systems, the conversion is performed with semiconductor switching devices such as diodes, thyristors, and power transistors such as the power MOSFET and IGBT. In contrast to electronic systems concerned with the transmission and processing of signals and data, substantial amounts of electrical energy are processed in power electronics.
Magnetic coreA magnetic core is a piece of magnetic material with a high magnetic permeability used to confine and guide magnetic fields in electrical, electromechanical and magnetic devices such as electromagnets, transformers, electric motors, generators, inductors, magnetic recording heads, and magnetic assemblies. It is made of ferromagnetic metal such as iron, or ferrimagnetic compounds such as ferrites. The high permeability, relative to the surrounding air, causes the magnetic field lines to be concentrated in the core material.
Negative resistanceIn electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it. This is in contrast to an ordinary resistor in which an increase of applied voltage causes a proportional increase in current due to Ohm's law, resulting in a positive resistance. While a positive resistance consumes power from current passing through it, a negative resistance produces power.
