Formation, electronic structure, and optical properties of self-assembled quantum-dot single-photon emitters in Ga(N,As,P) nanowires
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We have investigated the doping mechanism of pentacene with iodine and its impact on the structure and on the electronic properties of single crystals, powders, and thin films in a large range of iodine concentration up to six iodine per pentacene (PEN) mo ...
A magneto-optical study of accepters in varying degrees of confinement in GaAs/Al-x Ga-l-x, As quantum wells (QW's) is presented. A model for the splitting of the acceptor bound exciton (BE) and the allowed BE transitions in the presence of a magnetic fiel ...
The approximative single-band effective mass model for calculating the electronic structure and optical properties of flat quantum dots was introduced. The comparison with more accurate model has shown the applicability of the approximations. The method ha ...
This paper discusses separable term structure diffusion models in an arbitrage-free environment. Using general consistency results we exploit the interplay between the diffusion coefficients and the functions determining the forward curve. We introduce the ...
Near-field optical spectroscopy is used to investigate the effects of disorder in the optical processes in semiconductor quantum wires. We observe photoluminescence emissions from extended, delocalized excitons at low temperatures (5 K) and low excitation ...
The photoluminescence energy of strained (Ga, In)As quantum wells grown on (001) GaAs slightly misoriented (2 degrees-6 degrees) towards (111)A exhibits a blue shift when compared to quantum wells grown on perfectly oriented substrates. It is shown that th ...
We present here measurements on hexagonal cavities that have areas between 2.0 and 8.6 mu m/sup 2/. The 2D triangular lattice PBG mirrors are etched into a GaAs/AlGaAs waveguide heterostructure with 3 layers of InAs quantum dots at the centre of a 240 nm t ...