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Evidence of Smaller 1/F Noise in AlScN-Based Oscillators Compared to AlN-Based Oscillators

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Active Microelectromechanical Resonator

Daniel Grogg

The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...

EPFL2010

Low power frequency synthesizer for mobile communications systems

Imre Kovacs

A novel frequency synthesizer with a strong emphasis on low-power consumption (2mW) was developed for this thesis. A BAW-resonator was used for the design of the high-frequency oscillator. The BAW's high Q-Factor ensured a minimal power consumption, while ...

EPFL2009

Nanogap MEM resonators on SOI

Nicoleta-Diana Ciressan

Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...

EPFL2009

Noise induced temporal patterns in populations of globally coupled oscillators

Max-Olivier Hongler, Roger Filliger, Philippe Blanchard, Julio Rodriguez

The population dynamics of an assembly of globally coupled homogeneous phase oscillators is studied in presence of non-Gaussian fluctuations. The variance of the underlying stochastic process grows as t + \beta^2 t^2 ( \beta being a constant) and therefore ...

Shaker Verlag2009

Adaptive Frequency Oscillators and Applications

Auke Ijspeert, Jonas Buchli, Ludovic Righetti

In this contribution we present a generic mechanism to transform an oscillator into an adaptive frequency oscillator, which can then dynamically adapt its parameters to learn the frequency of any periodic driving signal. Adaptation is done in a dynamic way ...

2009

Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor

Mihai Adrian Ionescu, Daniel Grogg

The operation of a vibrating body field effect transistor (VB-FET) near pull-in is exploited to experimentally demonstrate a self-oscillating device. The positive feedback mechanism is triggered at the onset of inversion in a depleted VB-FET channel, near ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

A Narrowband Multi-Channel 2.4 GHz MEMS-Based Transceiver

Christian Enz

This paper presents a new radio architecture targeting RF transceivers for WSN, WBAN, and biomedical applications. The high miniaturization required by such applications is achieved thanks to the combination of high-Q MEMS devices, such as RF BAW re ...

2009

Bulk-source-coupled CMOS Quadrature Oscillators

Pierre-André Farine, Cyril Botteron, Uroschanit Yodprasit, Paul Saad

A quadrature oscillator based on a coupling between the bulk and the source of MOS transistors is proposed. Since the resonator load is not directly involved in the coupling process, the oscillation frequency is very close to the resonant frequency, hence ...

Institution of Engineering and Technology2009

9 MHz vibrating body FET tuning fork oscillator

Mihai Adrian Ionescu, Maher Kayal, Daniel Grogg, Fabrizio Lo Conte

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

A low-power 2.4 GHz CMOS receiver using BAW resonators

Jérémie Chabloz

It has already been a few years since the first appearance of micro-electromechanical systems (MEMS) in academic research. Since then, a broad number of devices have been designed under this generic term. Bulk-acoustic wave (BAW) resonators are among the f ...

EPFL2008