Simulation of silicon KOH and dry etching methods for micromould fabrication

The purpose of this project is to investigate the suitability of wet etching methods such as KOH etching for silicon micromoulds fabrication. Those moulds are intended for preceramic polymer (PCP) casting and specific requirements regarding the profile of the etched structures should be achieved. A process allowing to create deep structures with a high aspect ratio and smooth sidewalls would be the most appropriate. Moreover, obtaining slanted sidewalls could be useful as it would allow the resulting ceramic part to unmould itself during the shrinkage induced by pyrolysis. This is why KOH etching has to be considered, as it is an anisotropic process based on the etching along specific crystalline planes. Indeed, the etching rate along the planes of silicon is the slowest one, allowing therefore to etch structures with atomically smooth tilted walls. A mask with many different openings was then designed and fabricated in order to define the limits of KOH etching in peculiar situations. The consequences of using detailed structures containing reflex angles or the effects of tilting them on the mask with respect to the flat of the wafer will be then determined. The etching simulation was then realised thanks to the etching simulation software IntelliEtch, provided by IntelliSense. This tool allows to simulate both KOH and dry etching methods before visualising the results in 3D. It was therefore possible to firstly show that KOH is indeed a simple method to obtain smooth slanted and vertical walls by playing with the alignment of the mask openings. However, underetching of the mask can also easily occur, leading therefore to the loss of details contained in the original shapes design. Solutions can be found to overcome those issues by modifying the masks or by playing with other wafer orientations, but the problem of etching detailed structures nevertheless remains. An idea is therefore to use deep reactive ion etching methods such as Bosch process, as its advantages are mainly the ability to obtain high aspect ratio structures without underetching and therefore to etch detailed mask openings. Many unwanted effects can however occur with Bosch process, but by comparing both KOH etching and DRIE, it can be noticed that the drawbacks linked to both methods can compensate each other. It is therefore interesting to study the extent to which a process combining both techniques could be appropriate for micromoulds fabrication. Through a literature study, it will finally be shown that it is possible to obtain high aspect ratio structures containing many details with straight smooth sidewalls and which could be easily unmoulded. Different ways to combine KOH and dry etching methods that allow reaching all the requirements for an optimal micromould fabrication will also be presented.

Interface Investigations on Titanium Nitride Bilayer Systems

Dominik Anwar Jaeger

Nanocomposite coatings composed of two phases with atomically sharp phase boundaries, show interesting mechanical properties. These properties are often originating from their high interface to volume ratio. Composites of nanocrystalline titanium nitride (TiN) grains surrounded by a one to two monolayer thick interlayer of silicon nitride (Si3N4) show an enhanced nanohardness. The central theme of this thesis is concernedwith the interfacial properties of two-dimensional bilayer systems, which are used as model systems to describe the interfaces occurring in nanocomposite coatings. The systems under investigation are TiN interfaces in contact with silicon (Si), silicon nitride (Si3N4) and aluminum nitride (AlN). The primary tool used to analyze the interfaces of bilayer systems is X-ray Photoelectron Spectroscopy (XPS) with emphasis put on the shake-up feature of the Ti 2p photoelectron line. Shake-ups in TiN are observed as an additional peak on the lower binding energy side of the energy lines of the Ti 2p orbitals. Shake-ups are strongly influenced by valence electrons and electron density distributions. This makes them a powerful tool to probe the chemical and electronic structure of TiN interfaces. The aim of this study is to utilize the shake-up energy and its intensity to gain insight into interfacial structures and correlate their changes to interfacial polarization and macroscopic mechanical properties. Single crystalline (sc-) and oxygen-free TiN as well as oxygen-free bilayer systems were deposited by unbalanced magnetron sputtering and analyzed by Angle Resolved (AR-)XPS. Bilayer samples were deposited and their quality was controlled using X-ray diffraction (crystallinity), Rutherford back scattering (elemental composition), and atomic force microscopy (roughness). All XPS samples were fabricated, transfered and analyzed whilst maintaining ultra high vacuum. A precise and self-consistent XPS data processing method was developed to evaluate Ti 2p spectra. This method accounts for the correct photoelectron line shape, background subtraction and photoelectron peak area intensity. Binding energy, shake-up energy and intensity ratios of shake-ups taken frompristine TiN surfaces are precisely determined, and the influence of oxygen on the information content in peak positions and intensities was investigated. The shake-up energy and intensity of bulk sc-TiN and its origin of the shake-up are discussed. An analytical description for the XPS signal ratio of bilayer systems is derived to separate the interfacial signals from the bulk information. The results obtained by this analytical description are strongly influenced by the interface thickness that has been found to be proportional to the overlayer thickness. The revealed interface properties show a correlation between the shake-up intensity and the interface morphology, oxygen content, overlayer material and overlayer thickness. AR-XPS and X-ray Photoelectron Diffraction (XPD) results were used to interpret the crystalline structure of the different TiN/AlN and TiN/Si3N4 bilayer systems. AlN shows XPD patterns indicating a crystalline growth of AlN on sc-TiN. The electrically insulating AlN overlayer creates a charge accumulation at the TiN interface, which results in an enhanced shake-up intensity. XPD patterns of Si3N4 systems revealed a crystalline growth of Si3N4 in the first 0.6nm. The intensity of the diffraction patterns reduces with increasing Si3N4 overlayer thickness due to a change in the growth behavior from crystalline to amorphous structures. Si3N4 films show, in comparison to AlN, reduced interface charging and hence a lower shakeup intensity. The crystalline growth of Si3N4 in the initial stages is hindered in systems where a bias voltage is applied to the substrate during the deposition process. In contrast to the unbiased systems, which have crystalline interfacial structures, the biased systems no longer show XPD patterns due to a loss of crystallinity. Additionally the shake-up intensity of biased systems is thickness-independent, which is in contrast to unbiased systems. The difference in the shake-up intensity of biased and unbiased Si3N4 is explained by a different band gap of the Si3N4 structure in the first two monolayers. This thesis shows that the increase in the shake-up intensity is correlated to intrinsic and extrinsic interface charging. The obtained results, in combination with theoretical structure models from literature, show that in one to two monolayer thick interlayers a build-up of interface polarization is unlikely. The observed nanohardness enhancement in TiN/Si3N4 systems is explained with already known hardness effects.

EPFL2012

Wafer-level fabrication of individual solid-state nanopores for sensing single DNAs

Miao Zhang

For biomolecule sensing purposes a solid-state nanopore platform based on silicon has certain advantages as compared to nanopores on other substrates such as graphene, silicon nitride, silicon oxide etc Capitalizing on the developed CMOS technology, nanopores on silicon are scalable without any requirement for additional processing, the devices are low cost and the process can be repeatable with a high yield. One of the essential requirements in biomolecule sensing is the ability of the nanopore to interact with the analyte. In this work, we present a method for processing high aspect ratio, single nanopores in the range of 10-30 nm in diameter and approximately 700 nm in length on a silicon-on-insulator (SOI) wafer. The presented method of manufacturing the high aspect ratio individual nanopores combines optical lithography and anisotropic KOH etching with a final electrochemical etching step to form the nanopores and is repeatable and can be processed in batches. We demonstrate electrical detection of dsDNA translocation, where the characteristic time of the process is in the millisecond range. We also analyse the translocation parameters and correlate the enhanced length of the nanopore to a longer translocation time as compared to other substrates.

2020

Texture Formation in Hot-Dip Galvanized Coatings

Aurèle Mariaux

Continuous hot-dip galvanization is a process during which steel sheets are coated with a layer of Zn-Al alloy to protect them against corrosion. As the name indicates, this is achieved by dipping the preheated sheet into a bath of molten alloy. The sheet is then withdrawn and cooled down in air. The solidification microstructure of such coatings is made of large zinc grains (spangles), which preferentially have their hexagonal ‹0001› axis perpendicular to the sheet plane (basal texture). The mechanisms leading to this preferred orientation were investigated in this study, with a particular focus on nucleation and dendritic growth. An experiment was designed to reproduce the solidification stage of hot-dip galvanization on a laboratory scale. Industrial coatings were remelted in an infrared image furnace and solidified under controlled cooling conditions. Thanks to the wide range of possible cooling rates, the influence of this parameter on the size and orientation of the zinc grains could be investigated. The thermal plateau induced by the solidification of the thin coating could be detected, even for fairly thick steel sheets. However, the signal was better for larger coating/steel thickness ratio. A minimum coating thickness and Al content are needed if Fe-Zn intermetallic outbursts are to be avoided during remelting. Additionally, skin-pass, as well as any deformation of the coated sheets, must be avoided prior to these laboratory experiments. A coupled cellular automaton — finite volume model was concurrently developed to simulate solidification. It was then used to obtain the nucleation parameters of the spangles by inverse modeling based on the remelting experiments. The model accounts for the effects of zinc crystal symmetry and of the confined coating geometry on nucleation and growth phenomena. In particular, the preferred orientation of the grains is included in the nucleation site distribution. Its basal part is still an estimate, but it could be refined from new experimental measurements with the infrared remelting device. On a more fundamental side, a mathematical formulation of the anisotropic solid-liquid interfacial energy of Zn-Al alloys was derived from the equilibrium shape of liquid droplets in a solid matrix. This property changes by more than 40% between the c axis and the basal plane. This very large variation has important effects on the solidification mechanisms. The interfacial energy, as well as the wetting conditions for an anisotropic grain, were then implemented in a phase field model, which was used to simulate the growth of zinc dendrites in coatings. It revealed that the growth directions and velocities are strongly influenced by the film thickness and by anisotropic wetting effects. The possibility that the preferred zinc orientation could be induced by the textured steel substrate was investigated by comparing the orientation of zinc grains with that of the ferrite grains underneath. It was observed that spangles with a random orientation distribution are independent of the substrate. Unfortunately, the observed specimen did not exhibit a basal coating texture and thus, the existence of a relation between basal grains and ferrite texture could not be investigated. The anisotropy formulation was also used to extend the classical theory of heterogeneous nucleation to anisotropic metals. These computations showed that a basal orientation of the nuclei is strongly favored from an energy point of view. Such developments can explain the occurrence of basal grains around holes that form during infrared remelting, so-called rose structures. Preferential basal nucleation and the wetting influence on dendrite growth are also responsible for the morphology transition observed in Galfan, a Zn-Al coating of eutectic composition: when appropriate cooling conditions are applied, a shiny layer of basal grains forms at the top surface before the onset of eutectic solidification. Finally, these mechanisms could also explain the preferential basal orientation of regular hot-dip galvanized coatings. However, the conditions on a galvanizing line do not meet the criteria that are requested to activate them in Galfan. Additionally, the texture of hot-dip coatings is reported to depend on the surface preparation of the sheet, although the anisotropic nucleation theory does not consider the steel substrate. Further investigations on these contradictions are needed before these mechanisms can be used to explain the preferred orientation in regular galvanized coatings.