Martinus Gijs, Ata Tuna Ciftlik
We introduce a new low temperature (280 °C) parylene-C wafer bonding technique, where parylene-C bonds directly a Pyrex wafer to a silicon wafer with either a Si, SiO2 or Si3N4 surface with a bonding strength up to 23 MPa. The technique uses a single layer ...
IEEE2011