BiCMOSBipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal–oxide–semiconductor) logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions.
Optical networkingOptical networking is a means of communication that uses signals encoded in light to transmit information in various types of telecommunications networks. These include limited range local-area networks (LAN) or wide-area networks (WAN), which cross metropolitan and regional areas as well as long-distance national, international and transoceanic networks. It is a form of optical communication that relies on optical amplifiers, lasers or LEDs and wave division multiplexing (WDM) to transmit large quantities of data, generally across fiber-optic cables.
Optical wireless communicationsOptical wireless communications (OWC) is a form of optical communication in which unguided visible, infrared (IR), or ultraviolet (UV) light is used to carry a signal. It is generally used in short-range communication. OWC systems operating in the visible band (390–750 nm) are commonly referred to as visible light communication (VLC). VLC systems take advantage of light-emitting diodes (LEDs) which can be pulsed at very high speeds without a noticeable effect on the lighting output and human eye.
Image sensorAn image sensor or imager is a sensor that detects and conveys information used to form an . It does so by converting the variable attenuation of light waves (as they pass through or reflect off objects) into signals, small bursts of current that convey the information. The waves can be light or other electromagnetic radiation. Image sensors are used in electronic imaging devices of both analog and digital types, which include digital cameras, camera modules, camera phones, optical mouse devices, medical imaging equipment, night vision equipment such as thermal imaging devices, radar, sonar, and others.
Charge-coupled deviceA charge-coupled device (CCD) is an integrated circuit containing an array of linked, or coupled, capacitors. Under the control of an external circuit, each capacitor can transfer its electric charge to a neighboring capacitor. CCD sensors are a major technology used in digital imaging. In a CCD , pixels are represented by p-doped metal–oxide–semiconductor (MOS) capacitors.
Reactive-ion etchingReactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber.
Digital signal processorA digital signal processor (DSP) is a specialized microprocessor chip, with its architecture optimized for the operational needs of digital signal processing. DSPs are fabricated on MOS integrated circuit chips. They are widely used in audio signal processing, telecommunications, , radar, sonar and speech recognition systems, and in common consumer electronic devices such as mobile phones, disk drives and high-definition television (HDTV) products. The goal of a DSP is usually to measure, filter or compress continuous real-world analog signals.
F-numberAn f-number is a measure of the light-gathering ability of any optical system like a camera lens or even the human eye. It is calculated by dividing the system's focal length by the diameter of the entrance pupil. The f-number is also known as the focal ratio, f-ratio, or f-stop, and it is key in determining the depth of field, rate of light scattering, and exposure of a photograph. The f-number is dimensionless that is usually expressed using a lower-case hooked f with the format N, where N is the f-number.
Active-pixel sensorAn active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
PhotolithographyIn integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.
