Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
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Nowadays, the scarcity of cheap energy sources requires a particular effort in optimizing the performance of all conversions. The electric power vector is particulary expected to grow in importance, in conjunction with the development of renewable energy s ...
Herein we report a theoretical study of diode-like behavior of negatively charged (e.g., glass or silica) nanopores at different potential scan rates (1-1000 V center dot s(-1)). Finite element simulations were used to determine current-voltage characteris ...
We present and discuss recent measurements of the fast imaging diagnostic in JET. We focus on wide angle observations of few large ELM events (Delta W-ELM similar to 700 kJ) in plasmas with high current, magnetic field and stored energy (similar to 3 T, 3 ...
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...
This paper presents a recently introduced switching principle for emerging monolithic bidirectional devices. Based on the hypothesis that those switches may overcome conventional diode type solutions in power converters, an active self-switching process be ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
The contact resistance distribution among the current-carrying elements of three ITER conductor terminations is measured in the JORDI (JOint Resistance DIstribution) test facility at CRPP. One sample is based on Nb3Sn strands, the other two are NbTi cable- ...
In this paper we present Matlab analysis as well as CMOS implementation of an analog current mode Kohonen neural network (KNN). The presented KNN has been realized using several building blocks proposed earlier by the authors, such as: binary tree winner t ...
We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of f(T) = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A ...
Institute of Electrical and Electronics Engineers2010
A magnetic field sensor for measuring a direction of a magnetic field in a plane comprises a sensing structure (4) comprising a ring-shaped well (10), a plurality of contacts (11) of equal size placed at equal distance from each other along the ring-shaped ...
The phenomenon of electrochemical promotion of catalysis (EPOC) is most often fully reversible. Subsequent to long-lasting polarization, however, the new steady-state open-circuit catalytic activity after current interruption may remain significantly highe ...