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Publication
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Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zinc oxide (IZO) semiconductor utilizing a deep-ultraviolet (DUV)-enhanced curing, which enables a reduction of the annealing temperature to 200 degrees C. The effects of the DUV light exposure and the subsequent post-annealing parameters on the chemical composition of the IZO films have been investigated using Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy. The semiconductor layer has been combined with an high-lc aluminum oxide/yttrium aluminum oxide (AlOx/YAlOx) dielectric stack to realize fully solution-processed MOx TFTs at low temperature. The IZO/AlOx/YAlOx TFTs treated for 20 min DUV followed by 60 min at 200 degrees C exhibited I-on/I-off of >10(8), a subthreshold slope (SS) of 10(8), a SS