Adaptive Body Biasing in Strong Body Factor Technologies
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
This paper presents a new Procedural Analog Design tool called PAD. It is a chart-based design environment dedicated to the design of analog circuits aiming to optimise design and quality by finding good tradeoffs. This interactive tool allows step-by-step ...
The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...
Growing demand for the solid state meters for power and energy measurement leads to the fully integrated Hall sensor based microsystem solutions. In this paper we describe fully integrated SOI Hall sensor based microsystem for power and energy measurements ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off.state to the on-state (saturation). The additional voltage drop due to the quasi.saturation of the junction hardly depends on the DC-link ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...
Power Factor Corrected rectifiers are a new tendency in development of power supplies. In the last few years, a lot of R&D activities have led to a new category of products for one-phase applications. In this contribution, a new simplified topology is prop ...
We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...
L-mode to H-mode (LH) transitions are observed in a large variety of plasma conditions in TCV Ohmic plasmas. The power flowing through the separatrix at the LH transition differs by up to a factor of two from the predicted H-mode threshold power. Variation ...
A new test facility, dedicated to the measurement of contact resistance distribution in full-size conductor termination, has been designed and manufactured at CRPP Fusion Technology in Villigen, Switzerland. The facility will be used to characterize and qu ...
Tuning and high frequency capabilities and dynamic range performance of continuous-time oscillators and filters, using the weak inversion operation mode of a low-cost conventional 0.5 μm CMOS technology and multi-tanh linearisation technique are examined. ...