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Characterization of Amorphous Silicon Based Microchannel Plates with High Aspect Ratio

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This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Femtosecond laser assisted 3-dimensional freeform fabrication of metal microstructures in fused silica

Andreas Mortensen, Yves Bellouard, Raphaël Charvet, Fatmah Ebrahim, Cyril Dénéréaz

Femtosecond laser exposure of fused silica combined with chemical etching has opened up new opportunities for three-dimensional freeform processing of micro-structures that can form complex micro-devices of silica, integrating optical, mechanical and/or fl ...

Spie-Int Soc Optical Engineering2017

Potential applications of electron emission membranes in medicine

Edoardo Charbon

With a miniaturised stack of transmission dynodes, a noise free amplifier is being developed for the detection of single free electrons, with excellent time- and 2D spatial resolution and efficiency. With this generic technology, a new family of detectors ...

2015

Gyre formation within embayments of a large lake (Lake Geneva, Switzerland)

David Andrew Barry, Alfred Johny Wüest, Ulrich Lemmin, Damien Bouffard, Amir Mehdi Razmi, Nicolas Le Dantec

Numerical simulations were carried out to examine gyre formation within open, wide lacustrine embayments. The present study was motivated by observed differences in gyre formation within two open and wide embayments (located at Vidy and Morges in Lake Gene ...

2013

Deep-ultraviolet picosecond flat-top pulses by chirp-matched sum frequency generation

Christoph Peter Hauri

Picosecond, flat-top, deep-UV pulses are needed to generate high-brightness electron beams to efficiently drive x-ray free electron lasers. Current metal photocathodes have low efficiency and therefore require high-energy pulses, and the generation of high ...

2012

High Spatial Resolution of Thin-Film-on-ASIC Particle Detectors

Christophe Ballif, Matthieu Despeisse, Yannick Samuel Riesen, Andrea Franco

Thin-film-on-ASIC (TFA) detectors are monolithic pixel devices that consist of amorphous silicon detecting diodes directly deposited on readout electronics. This paper presents a characterization of the TFA spatial resolution using the electron-beam-induce ...

Ieee-Inst Electrical Electronics Engineers Inc2012

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Three Dimensional (3D) integration, based on through silicon vias (TSV), has the potential to become a key enabling technology for many applications. TSVs are commonly categorized according to their aspect ratio and diameter. An equally important parameter ...

IEEE2012

In order to track single superparamagnetic microbeads serving as markers in biomolecular assays, high-sensitivity, sub-micron magnetic sensors which can be integrated onto Lab-on-a-chip platforms are needed. This thesis studies the realization and characte ...

EPFL2011

Driven by the exponentially growing demand for capacity, it is already apparent that the next generation of telecommunication networks will be radically different from previous implementations; coherent detection along with powerful digital signal processi ...

2011

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

Mihai Adrian Ionescu, Cyrille Hibert, Daniel Grogg, Marion Hermersdorf

This paper reports on the fabrication of sub-micron trenches on silicon-on-insulator (SOI) required in many MEMS devices and on bulk silicon. Trenches in the range of 100-500 nm had been etched with the deep reactive ion etching (DRIE) by using the SHARP ( ...

2011