Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells
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This thesis investigates amorphous (a-Si:H) and microcrystalline (μc-Si:H) solar cells deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) in the n-i-p or substrate configuration. It focuses on processes that allow the us ...
We present a photoemission spectroscopy study of As-rich n-GaAs(001) surface modified by the deposition of an undoped silicon overlayer with thickness quite narrowly covering the interval from similar to 4 to 25 Angstrom. We observed a nonmonotonic relatio ...
Production volume of PV modules increases at > 35% per year, but one is yet far from making a global impact on energy supply. One of the obstacles is given by the present high production costs of PV modules. A possibility to reduce costs are thin-film PV m ...
Increasing the efficiency of crystalline silicon (c-Si) solar cells requires the reduction of both bulk and interface recombination. Even if bulk recombination is almost suppressed, the symmetry of the crystal lattice is disturbed at the surface and hence, ...
A heterogeneous charge transport model for microcrystalline silicon based on fluctuation-induced tunneling is presented that fits the low-temperature saturation observed in dark conductivity measurements and accounts for the film microstructure. Excellent ...
A direct-bonded GaAs/InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-misma ...
Doped hydrogenated amorphous silicon a-Si:H films of only a few nanometer thin find application in a-Si:H/crystalline silicon heterojunction solar cells. Although such films may yield a field effect at the interface, their electronic passivation properties ...
This paper investigates the stability of dilution series of pin and nip microcrystalline silicon solar cells under low-energy proton irradiation (E = 405 keV). Variation of electrical parameters, defect-related absorption and Urbach parameter are investiga ...
Impedance measurements of meso-porous TiO2 electrodes in contact with aq. and nonaq. electrolytes have been performed in the dark and under UV illumination. In the dark the differential capacitance was found to be dominated by the back contact. Bandgap exc ...
Nanocrystalline semiconductor films are constituted by a network of mesoscopic oxide particles, such as TiO2, ZnO, Nb2O5 which are interconnected to allow for electronic conduction to take place. The pores between the particles are filled with a semiconduc ...